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Rate Controlled Sintering of Sic with Additions of (a) Al2O3 +Y2O3 (b) B + C; (c) B4C + C

  • J.-M. Lihrmann
  • P. Halary
  • E. Kostic
  • H. Schubert

Abstract

Densification of a-silicon carbide with different types of additives has been performed in view of the rate-controlled sintering (R.C.S) concept developed by Professor Palmour. Kinetic results suggest that this concept should apply to high temperature materials such as SiC, whether densification predominantly occurs by liquid state or by solid state diffusion. However, a minimum amount of additives seems necessary in order to observe a controllable and reproducible sintering behavior, although high final densities may be achieved with lower amounts of additives. The homogeneous distribution of additives throughout the sample is thus thought to be a key issue in the rate-controlled sintering of silicon carbide.

Keywords

Silicon Carbide Solid State Diffusion Transient Liquid Phase Densification Rate Pressureless Sinter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • J.-M. Lihrmann
    • 1
    • 2
  • P. Halary
    • 1
  • E. Kostic
    • 1
    • 3
  • H. Schubert
    • 1
  1. 1.Max-Planck Institut für MetallforschungStuttgart 80West Germany
  2. 2.Université Paris XIIIVilletaneuseFrance
  3. 3.Materials DepartmentBoris Kidric Institute of Nuclear SciencesBelgradeYugoslavia

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