Abstract
Y-Ba-Cu-O thin films have been grown from stoichiometric compound targets using dc magnetron sputtering. Initially the film composition was strongly off-stoichiometric and the deposition rate very low. However, after extensive presputtering stoichiometric films, with respect to the metal content, were deposited at a rate of 2–2.5 Å/s. The long pre-sputtering time (20–30 h) needed is due to a slowly changing oxygen content on the target surface. This is caused not only by preferential sputtering effects but also by bulk diffusion in the target.
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Selinder, T.I. et al. (1988). Stoichiometry and Deposition Rate of DC Magnetron Sputtered Y-Ba-Cu-O Thin Films as a Function of Target Presputtering Time. In: Weber, H.W. (eds) High-T c Superconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0846-9_46
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DOI: https://doi.org/10.1007/978-1-4899-0846-9_46
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