Advertisement

Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods

Abstract

The use of 18O tracing to investigate atomic transport mechanisms during oxide growth is described. Experimental results for thermal oxidation of silicon are presented and discussed. It is shown that the growth in pure water vapor occurs by an interstitial diffusion of water molecules reacting with the silica network. It is shown that the growth in dry oxygen exhibits two main features:
  • an interstitial transport of 02, which is largely dominant for thick oxide films

  • step by step motion of network oxygen atoms whose contribution increases as oxide thickness decreases.

Keywords

Oxide Thickness Oxygen Exchange Oxide Growth Silica Network Pure Water Vapor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    B.E. DEAL and A.S. GROVE, J. Appl. Phys. 36, 3770 (1965).CrossRefGoogle Scholar
  2. 2.
    S. RIGO, “Instabilities in silicon devices” Vol. 1, Edited by G. BARBOTTIN and A. VAPAILLE, ( Amsterdam, North Holland ) (1986).Google Scholar
  3. 3.
    S. RIGO, F. ROCHET, B. AGIUS and A. STRABONI, J. Electrochem. Soc. 129, 867 (1982).CrossRefGoogle Scholar
  4. 4.
    F. ROCHET, Thèse de Doctorat de 3e Cycle PARIS (1981).Google Scholar
  5. 5.
    G. AMSEL and D. SAMUEL, Anal. Chem. 39, 1689 (1967).CrossRefGoogle Scholar
  6. 6.
    D. DIXMIER, A. L’HOIR and G. A.SEL, Nucl. Inst. Methods, 197, 537 (1982).CrossRefGoogle Scholar
  7. 7.
    F. ROCHET, S. RIGO, M. FROMENT, C. D’ANTERROCHES, C. MAILLOT, H. ROULET and G. DUFOUR, Advances in Physics, 35, 237 (1986).Google Scholar
  8. 8.
    E. ROSENCHER, A. STRABONI, S. RIGO and G. AMSEL, Appl. Phys. Lett. 34, 254 (1978).CrossRefGoogle Scholar
  9. 9.
    F. ROCHET, B. AGIUS and S. RIGO, J. Electrochem. Soc. 131, 914 (1984).CrossRefGoogle Scholar
  10. 10.
    J.A. COSTELLO and R.E. TRESSLER, J. Electrochem. Soc. 131, 1944 (1984).CrossRefGoogle Scholar
  11. 11.
    C.J. HAN and C.R. HELMS, J. Vac. Sci. Technol. A4, 853 (1986).Google Scholar
  12. 12.
    J.C. DUPUY, G. PRUDON, P. PINARD, S. RIGO, “Proceedings of SIMS”, Versailles, 13–18 Sept. 1987, John Wiley and Sons Publishers, In Press.Google Scholar
  13. 13.
    S. RIGO, F. ROCHET, A. STRABONI and B. AGIUS, “The Physics of MOS Insulators” G. LUCOWSKY, S.T. PANTALIDES and F.L. GALEARNER, Editors, P. 167, Pergamon Press, Clumsford, NY (1980).Google Scholar
  14. 14.
    F. ROCHET and S. RIGO, Philosophical Magazine B, 55, 747 (1987).CrossRefGoogle Scholar
  15. 15.
    F. ROCHET and S. RIGO, Philosophical Magazine B, 57, 123 (1988).Google Scholar
  16. 16.
    J.C. MIKKELSEN, Appl. Phys. Lett. 39, 601 (1981).Google Scholar
  17. 17.
    W.G. SPITZER and J.R. LIGENZA, J. Phys. Chem. Solids, 14, 131 (1960) and 17, 196 (1961).CrossRefGoogle Scholar
  18. 18.
    S. RIGO, F. ROCHET, I. TRIMAILLE, Unpublished.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • S. Rico
    • 1
  1. 1.G.P.S. de l’E.N.S.Universite ParisParis Cedex 05France

Personalised recommendations