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Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Abstract

The formation of thin SiO2 films via thermal oxidation on single crystal Si substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin SiO2 formation yet exists, but recent studies lead in new directions towards this goal.

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Author information

Authors and Affiliations

  1. Department of Chemistry CB 3290, University of North Carolina, Chapel Hill, N.C., 27599-3290, USA

    Eugene A. Irene

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  1. Eugene A. Irene
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Editor information

Editors and Affiliations

  1. Stanford University, Stanford, California, USA

    C. Robert Helms

  2. Fairchild Research Center, National Semiconductor, Santa Clara, California, USA

    Bruce E. Deal

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© 1988 Springer Science+Business Media New York

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Irene, E.A. (1988). Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_7

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  • DOI: https://doi.org/10.1007/978-1-4899-0774-5_7

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0776-9

  • Online ISBN: 978-1-4899-0774-5

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