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Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

  • Eugene A. Irene

Abstract

The formation of thin SiO2 films via thermal oxidation on single crystal Si substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin SiO2 formation yet exists, but recent studies lead in new directions towards this goal.

Keywords

Contact Angle Oxidation Rate Native Oxide Intrinsic Stress Initial Regime 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Eugene A. Irene
    • 1
  1. 1.Department of Chemistry CB 3290University of North CarolinaChapel HillUSA

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