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Effects if X Irradiation and High Field Electron Injection on the Properties of Rapid Thermal Oxides

  • W. K. Schubert
  • C. H. Seager

Abstract

The effects of x-ray exposure and high field electron injection on the electrical properties of capacitors incorporating rapid thermal oxides show a considerable dependence on the particular post oxidation annealing (POA) conditions used during oxide processing. Most important seem to be the POA ambient and temperature. POA temperatures from 1150°C to 800°C have been investigated, with lower temperatures resulting in reduced midgap voltage shifts for a given x-ray dose or injected electron fluence. Low temperature high field injection experiments on the present samples have failed to show a direct conversion from trapped holes to interface states formed after photoinjection of electrons as has been reported for conventionally grown thicker oxides. Rather, the injected electrons seem to simply neutralize the trapped holes, returning the capacitance-voltage curve to near its original position and shape.

Keywords

Interface State Trap Hole Breakdown Field Interface State Density Injection Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • W. K. Schubert
    • 1
  • C. H. Seager
    • 1
  1. 1.Sandia National LaboratoriesAlbuquerqueUSA

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