Abstract
The kinetics of the oxide growth in TCA/O2 a ambient is investigated. The oxide growth rate is related to the behaviour of the Cl concentration (as measured by SIMS) near the SiO2/Si interface. A double layer structure for the SiO2 was assumed in this work. One layer is the bulk oxide, the other one is a Cl peak containing layer near the SiO2/Si interface (about 200A thick). Because of the large amount of the nonbridging bonds ip this Cl peak layer, the oxide species diffusivity enhancement is not the same in these two layers. Also because of the large amount of unstable reaction products and the catalytical action of the incorporated Cl in this Cl peak layer, the oxide reaction process takes place not only at the SiO2/Si interface itself, but also near the SiO2/Si interface within this el peak layer. It is observed that the Cl peak layer moves together with the SiO2/Si interface but the width of this layer is nearly constant (about 200A). On the other hand the total amount of incorporated Cl concentration increases during the oxide growth in chlorine ambient. Obviously, the effect of the Cl peak layer on the diffusion and the reaction fluxes should be thickness dependent. For the experimental data the plots of dt/dx vs. x also show a tendency to bend upwards for increasing x in certain growth conditions. Based on the above considerations, the behaviour of the Cl concentration near the SiO2/Si interface seems to be responsible for this unusual growth rate. Furthermore, a model for the oxide growth in a chlorine ambient is proposed in this work. The experimental data are fitted by this model and the model parameters are extracted.
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References
E. Janssens and G. Declerck, J. Electrochem. Soc., 125, 1696 (1978).
J. Monkowski, Solid State Technology, July 1979, pp. 58
B. R. Singh and P. Balk, J. Electrochem. Soc.. 126, 1288 (1979).
K. Ehara, K. Sakuma and K. Ohwada, ibid, 126, 2249 (1979).
K. Hirabayashi and J. Iwamura, ibid, 120, 1595 (1973).
D. W. Hess and D. E. Deal, ibid, 124, 735 (1977).
M. D. Monkowski, J. R. Monkowski, I. S. T. Tsong, J. Stach and R. E. Tressler, J. Non-Cryst. Solids, 49, 201 (1982).
J. W. Rouse, C. R. Helms, B. E. Deal and R. R. Razank, J. Electrochem. Soc., 131, 887 (1984)
W. A. Bosenberg, C. W. Magee and E. A. Botnick, ibid, 131, 2397 (1984).
H. L. Tsai, S. R. Butter, D. B. Willians, H. W. Kraner and K. W. Janes, ibid, 131, 411 (1984).
Y. D. Sheu, S. R. Butter and F. J. Feigl, ibid, 133, 2136 (1986).
R. G. Cosway and Schyi-yi (C. E. ) Wu, ibid, 132, 151(1985).
M. A. Hopper, R. A. Clark and L. Young, ibid, 122, 1216 (1975).
B. E. Deal and A. S. Grove, J. Appl. Phys., 36, 3770 (1965).
W. F. Banholzer and Ghezzo, J. Electrochem. Soc., 134, 415 (1987).
R. E. Tressler, J. Stach and D. M. Metz, ibid, 124, 607 (1977).
A. Rohatgi, S. R. Butter, F. J. Feigl, H. W. Kraner and K. W. Jones, J. Electrochem. Soc. 126, 143 (1979).
W. Maes, K. M. DeMeyer and L. H. Dupas, IEEE Trans. on CAD, CAD 5 (2), 320(1986).
M. D. Monkowski, G. H. Fallouh and J. R. Monkowski, to be published (submitted to J. Appl. Phys)
J. Blanc, J. Electrochem. Soc. 133, 1982 (1986).
Z. M. Ling, L. Dupas and K. DeMeyer, to be published in the J. Electrochem. Soc.
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Ling, ZM., Dupas, L.H., De Meyer, K.M. (1988). Modeling of the Oxide Growth in a Chlorine Ambient. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_6
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_6
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