Modeling of the Oxide Growth in a Chlorine Ambient

  • Zhi-Min Ling
  • Luc H. Dupas
  • Kristin M. De Meyer


The kinetics of the oxide growth in TCA/O2 a ambient is investigated. The oxide growth rate is related to the behaviour of the Cl concentration (as measured by SIMS) near the SiO2/Si interface. A double layer structure for the SiO2 was assumed in this work. One layer is the bulk oxide, the other one is a Cl peak containing layer near the SiO2/Si interface (about 200A thick). Because of the large amount of the nonbridging bonds ip this Cl peak layer, the oxide species diffusivity enhancement is not the same in these two layers. Also because of the large amount of unstable reaction products and the catalytical action of the incorporated Cl in this Cl peak layer, the oxide reaction process takes place not only at the SiO2/Si interface itself, but also near the SiO2/Si interface within this el peak layer. It is observed that the Cl peak layer moves together with the SiO2/Si interface but the width of this layer is nearly constant (about 200A). On the other hand the total amount of incorporated Cl concentration increases during the oxide growth in chlorine ambient. Obviously, the effect of the Cl peak layer on the diffusion and the reaction fluxes should be thickness dependent. For the experimental data the plots of dt/dx vs. x also show a tendency to bend upwards for increasing x in certain growth conditions. Based on the above considerations, the behaviour of the Cl concentration near the SiO2/Si interface seems to be responsible for this unusual growth rate. Furthermore, a model for the oxide growth in a chlorine ambient is proposed in this work. The experimental data are fitted by this model and the model parameters are extracted.


Oxide Thickness Oxide Growth Double Layer Structure Diffusivity Enhancement Chlorine Species 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    E. Janssens and G. Declerck, J. Electrochem. Soc., 125, 1696 (1978).Google Scholar
  2. 2.
    J. Monkowski, Solid State Technology, July 1979, pp. 58Google Scholar
  3. 3.
    B. R. Singh and P. Balk, J. Electrochem. Soc.. 126, 1288 (1979).Google Scholar
  4. 4.
    K. Ehara, K. Sakuma and K. Ohwada, ibid, 126, 2249 (1979).Google Scholar
  5. 5.
    K. Hirabayashi and J. Iwamura, ibid, 120, 1595 (1973).Google Scholar
  6. 6.
    D. W. Hess and D. E. Deal, ibid, 124, 735 (1977).Google Scholar
  7. 7.
    M. D. Monkowski, J. R. Monkowski, I. S. T. Tsong, J. Stach and R. E. Tressler, J. Non-Cryst. Solids, 49, 201 (1982).Google Scholar
  8. 8.
    J. W. Rouse, C. R. Helms, B. E. Deal and R. R. Razank, J. Electrochem. Soc., 131, 887 (1984)Google Scholar
  9. 9.
    W. A. Bosenberg, C. W. Magee and E. A. Botnick, ibid, 131, 2397 (1984).Google Scholar
  10. 10.
    H. L. Tsai, S. R. Butter, D. B. Willians, H. W. Kraner and K. W. Janes, ibid, 131, 411 (1984).Google Scholar
  11. 11.
    Y. D. Sheu, S. R. Butter and F. J. Feigl, ibid, 133, 2136 (1986).Google Scholar
  12. 12.
    R. G. Cosway and Schyi-yi (C. E. ) Wu, ibid, 132, 151(1985).Google Scholar
  13. 13.
    M. A. Hopper, R. A. Clark and L. Young, ibid, 122, 1216 (1975).Google Scholar
  14. 14.
    B. E. Deal and A. S. Grove, J. Appl. Phys., 36, 3770 (1965).Google Scholar
  15. 15.
    W. F. Banholzer and Ghezzo, J. Electrochem. Soc., 134, 415 (1987).Google Scholar
  16. 16.
    R. E. Tressler, J. Stach and D. M. Metz, ibid, 124, 607 (1977).Google Scholar
  17. 17.
    A. Rohatgi, S. R. Butter, F. J. Feigl, H. W. Kraner and K. W. Jones, J. Electrochem. Soc. 126, 143 (1979).Google Scholar
  18. 18.
    W. Maes, K. M. DeMeyer and L. H. Dupas, IEEE Trans. on CAD, CAD 5 (2), 320(1986).Google Scholar
  19. 19.
    M. D. Monkowski, G. H. Fallouh and J. R. Monkowski, to be published (submitted to J. Appl. Phys)Google Scholar
  20. 20.
    J. Blanc, J. Electrochem. Soc. 133, 1982 (1986).Google Scholar
  21. 21.
    Z. M. Ling, L. Dupas and K. DeMeyer, to be published in the J. Electrochem. Soc.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Zhi-Min Ling
    • 1
  • Luc H. Dupas
    • 1
  • Kristin M. De Meyer
    • 1
    • 2
  1. 1.IMEC v. z. w.Leuven, HeverleeBelgium
  2. 2.Katholieke universiteitLeuvenBelgium

Personalised recommendations