Abstract
We study Si-SiO2 interfaces with surface channel carriers subjected to strong, lateral rf fields (Er f ∈104 V/cm; f≈3GHZ) at 4.2K. Interface degradation is found to be caused by hot holes in a two step process. Positive charge appears in the oxide at 4.2K and is subsequently converted to interface traps by warming up to 300K. When the severely degraded sample is now subjected to a 400°C forming gas anneal cycle, substantial improvement over the original predegradation quality results. The effect has been examined for various types of oxides on n- and p-type samples.
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References
Ye Qiu-Yi, A. Zrenner, and F. Koch, Appl. Phys. Lett. 52, 561 (1987).
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© 1988 Springer Science+Business Media New York
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Ye, Q.Y., Zrenner, A., Koch, F. (1988). Interface Improvement by Hot Carrier Degradation — Forming Gas Annealing Cycle. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_59
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_59
Publisher Name: Springer, Boston, MA
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