Interface and Bulk Trapping Centers in Low Temperature Ion-Beam Sputtered Silicon Dioxide Films

  • M. E. Zvanut
  • F. J. Feigl


Current and capacitance voltage data obtained using a metal-sputtered oxide-semiconductor capacitor revealed trapping centers similar to those observed in irradiated thermal oxides. A positive charge density of approximately 5 × 1012cm−2 exists in the as-sputtered film and an equivalent amount of charge is present at the silicon/silicon dioxide intgrface. Analysis of current-induced trapping yields a 5 × 10−15cm2 electron capture cross section for a bulk trapping center.


Trap Charge Interface Trap Trapping Center Voltage Shift Charge Trapping 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • M. E. Zvanut
    • 1
  • F. J. Feigl
    • 1
  1. 1.Sherman Fairchild Center, Solid State StudiesLehigh UniversityBethlehemUSA

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