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Interface and Bulk Trapping Centers in Low Temperature Ion-Beam Sputtered Silicon Dioxide Films

  • M. E. Zvanut
  • F. J. Feigl

Abstract

Current and capacitance voltage data obtained using a metal-sputtered oxide-semiconductor capacitor revealed trapping centers similar to those observed in irradiated thermal oxides. A positive charge density of approximately 5 × 1012cm−2 exists in the as-sputtered film and an equivalent amount of charge is present at the silicon/silicon dioxide intgrface. Analysis of current-induced trapping yields a 5 × 10−15cm2 electron capture cross section for a bulk trapping center.

Keywords

Trap Charge Interface Trap Trapping Center Voltage Shift Charge Trapping 
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References

  1. 1.
    J. R. Sites, P. Gilstrap, and R. Rujkorakarn, Opt. Engr. 22, 447 (1983).Google Scholar
  2. 2.
    S. Suyama, A. Odamoto, and T. Serikawa, J. Appl. Phys. 62, 2360 (1987).CrossRefGoogle Scholar
  3. 3.
    A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Let. 59, 213 (1987).CrossRefGoogle Scholar
  4. 4.
    S. I. Raider, R. F u tsch, and M. J. Palmer, J. Electrochem. Soc. 122, 413 (1975).Google Scholar
  5. 5.
    P. Solomon, J. Appl. Phys. 48, 3843 (1977).CrossRefGoogle Scholar
  6. 6.
    R. O. Cale, “Electron Currents in Al/Sí02/Si MOS Capacitors” (Ph.D. Dissertation, Lehigh University, 1984), unpublished.Google Scholar
  7. 7.
    F. J. Fiegl in VLSI Electronics Microstructure Science N. Einspruch and G. Larrabee, eds. Vol. 6 ( Academic, New York, 1983 ), p. 147.Google Scholar
  8. 8.
    E.H.Nicollian and J. R. Brews, MOS Physics and Technology ( Wiley, New York, 1982 ).Google Scholar
  9. 9.
    R. J.Powell and C. N. Berglund, J. Appl. Phys. 42, 4390 (1971).Google Scholar
  10. 10.
    M. E.Zvanut, F. J. Fiegl, and J. D. Zook, J. Appl. Phys., submitted for publication.Google Scholar
  11. 11.
    U. Sharma, RCA Rev. 47, 551 (1986).Google Scholar
  12. 12.
    D. R. Young, in Insulating Films on Semiconductors, G. C. Roberts and M. J. Morant, eds. ( Institute of Physics, London, 1980 ), p. 28.Google Scholar
  13. 13.
    M. V. Fischetti, J. Appl. Phys. 56, 575 (1984).CrossRefGoogle Scholar
  14. 14.
    T. P. Ma, C. Scoggan, and R. Leone, Appl. Phys. Lett. 27, 61 (1975).CrossRefGoogle Scholar
  15. 15.
    P. S. Winokur, J. M. McGarrity, and H. E. Boesch, Jr., IEEE Trans. Nucl. Sci. NS-23, 1580 (1976).Google Scholar
  16. 16.
    J. M. Aitken and Dr. R. Young, J. Appl. Phys. 47, 1196 (1976).CrossRefGoogle Scholar
  17. 17.
    T. W. Hickmott, Appl. Phys. Lett. 15, 232 (1969).Google Scholar
  18. 18.
    M. E. Zvanut, “The Development of Spectroscopic Techniques to Study Defects in Thin Films Silicon Dioxide”, (Ph.D. Dissertation, Lehigh University, 1988), unpublished.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • M. E. Zvanut
    • 1
  • F. J. Feigl
    • 1
  1. 1.Sherman Fairchild Center, Solid State StudiesLehigh UniversityBethlehemUSA

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