Ion Implantation and Ionizing Radiation Effects in Thermal Oxides

Abstract

Electron spin resonance data on oxygen vacancy defect (positive fixed oxide charge) creation in thin, thermal oxides produced by ion implantation is reviewed. It is found that energy dissipated by atomic displacement processes creates defects between 400 and 700 times more efficiently than that lost by ionizing processes. It is furthermore determined that the energy required in a displacement process to create an oxygen vacancy center is ~ 28 eV. Isochronal and isothermal annealing data combined with subsequent irradiation with ionizing radiation demonstrate that although oxygen vacancy centers dissappear for anneal temperatures above 400°C, they are not irreversibly removed unless temperatures ≧ 800°C are used.