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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface pp 509–518Cite as

Hot Electron Transport in Silicon Dioxide

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Abstract

Hot electron transport in silicon dioxide is examined with emphasis on current experimental and theoretical 0 results. For oxide layers thicker than 100 Å, steady-state transport has been shown to control the carrier flow at all fields studied. The transition from a nearly thermal electron distribution at electric fields less than approximately 1.5 MV/cm to significantly hot distributions with average energies between 2 and 6 eV at higher fields of up to 16 MV/cm is discussed. The significance of non-polar phonon scattering in controlling the dispersive transport at higher electric fields, thereby preventing run-away and avalanche breakdown, is reviewed. For oxide thicknesses ≲ 100 Å, a transition from the steady-state to the ballistic transport regime occurs with the observation of quantum size effects and single phonon scattering events, as predicted theoretically. Also, both interface and bulk trap generation in SiO2 are shown to be caused by hot electrons with energies ≳ 2.2 eV.

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Authors and Affiliations

  1. IBM Thomas J. Watson Reasearch Center, P.O. Box 218, Yorktown Heights, N.Y., 10598, USA

    D. J. DiMaria & M. V. Fischetti

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  1. D. J. DiMaria
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  2. M. V. Fischetti
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Editor information

Editors and Affiliations

  1. Stanford University, Stanford, California, USA

    C. Robert Helms

  2. Fairchild Research Center, National Semiconductor, Santa Clara, California, USA

    Bruce E. Deal

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DiMaria, D.J., Fischetti, M.V. (1988). Hot Electron Transport in Silicon Dioxide. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_56

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  • DOI: https://doi.org/10.1007/978-1-4899-0774-5_56

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0776-9

  • Online ISBN: 978-1-4899-0774-5

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