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Historical Perspective on Tunneling in SiO2

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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Abstract

This paper examines tunneling in SiO2 in light of work since 1974. It considers both its near-ideal behavior and departures from the ideal. The trapezoidal tunneling barrier is a good first order model provided it has not been degraded by excessive tunnel injection. However, the tunneling dispersion relation x(E) is not constant throughout the oxide film, but different near each interface. For a specific barrier region, good agreement is obtained using a two valley, two effective mass k(E) dependence. Quantum interference effects are clearly observed at the Si-SiO2 interface, but not at the metal-SiO2 interface.

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Author notes

  1. J. Maserjian

    Present address: University of California, Santa Barbara, California, USA

Authors and Affiliations

  1. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, 91109, USA

    J. Maserjian

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  1. J. Maserjian
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Editor information

Editors and Affiliations

  1. Stanford University, Stanford, California, USA

    C. Robert Helms

  2. Fairchild Research Center, National Semiconductor, Santa Clara, California, USA

    Bruce E. Deal

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© 1988 Springer Science+Business Media New York

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Maserjian, J. (1988). Historical Perspective on Tunneling in SiO2 . In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_55

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  • DOI: https://doi.org/10.1007/978-1-4899-0774-5_55

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0776-9

  • Online ISBN: 978-1-4899-0774-5

  • eBook Packages: Springer Book Archive

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