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Historical Perspective on Tunneling in SiO2

  • J. Maserjian

Abstract

This paper examines tunneling in SiO2 in light of work since 1974. It considers both its near-ideal behavior and departures from the ideal. The trapezoidal tunneling barrier is a good first order model provided it has not been degraded by excessive tunnel injection. However, the tunneling dispersion relation x(E) is not constant throughout the oxide film, but different near each interface. For a specific barrier region, good agreement is obtained using a two valley, two effective mass k(E) dependence. Quantum interference effects are clearly observed at the Si-SiO2 interface, but not at the metal-SiO2 interface.

Keywords

Quantum Interference Effect Branch Energy Conduction Band Valley Oscillatory Factor WKBJ Approximation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • J. Maserjian
    • 1
  1. 1.Jet Propulsion LaboratoryCalifornia Institute of TechnologyPasadenaUSA

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