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Abstract

Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices. The simplicity of these devices makes it relatively easy to study the effect of variations in the processing technology used. The results show that processing dependencies are different for “bulk” traps and traps located at the Si-SiO2 interface. It is interesting to note that both the hole and electron traps located at the interface have the same processing dependence and are very sensitive to treatments in oxygen suggesting that these traps are related to an oxygen deficiency in the SiO2 near the interface.

Keywords

Electron Trap Rapid Thermal Annealing Interface Trap Hole Trap Trapping Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • D. R. Young
    • 1
  1. 1.Sherman Fairchild CenterLehigh UniversityBethlehemUSA

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