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Charge Trapping in SiO2

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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Abstract

Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices. The simplicity of these devices makes it relatively easy to study the effect of variations in the processing technology used. The results show that processing dependencies are different for “bulk” traps and traps located at the Si-SiO2 interface. It is interesting to note that both the hole and electron traps located at the interface have the same processing dependence and are very sensitive to treatments in oxygen suggesting that these traps are related to an oxygen deficiency in the SiO2 near the interface.

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Author information

Authors and Affiliations

  1. Sherman Fairchild Center, Lehigh University, Bethlehem, PA, 18015, USA

    D. R. Young

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  1. D. R. Young
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Editor information

Editors and Affiliations

  1. Stanford University, Stanford, California, USA

    C. Robert Helms

  2. Fairchild Research Center, National Semiconductor, Santa Clara, California, USA

    Bruce E. Deal

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© 1988 Springer Science+Business Media New York

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Young, D.R. (1988). Charge Trapping in SiO2 . In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_54

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  • DOI: https://doi.org/10.1007/978-1-4899-0774-5_54

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0776-9

  • Online ISBN: 978-1-4899-0774-5

  • eBook Packages: Springer Book Archive

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