Interstitial Fluxes During Silicon Oxidation
In extending IC fabrication models from 1D to 2D, it is essential to understand the behavior of point defects. Recent experimental work on enhanced diffusion during the thermal oxidation of silicon demonstrates that altering generation/recombination processes in the silicon substrate does not affect interstitial supersaturation during oxidation. In contrast, experimental observations of enhanced diffusion during the thermal nitridation of SiO2, which results in the growth of a thin interface oxide, indicate that changes within the oxide have a strong influence on interstitial kinetics. These observations suggest that diffusion into the oxide, rather than diffusion into the silicon or surface regrowth, is the dominant sink for interstitials generated by the oxidizing interface. Further, the sublinear dependence of OED and OISF growth on oxidation rate is shown to be a direct result of assuming a steady-state balance between interstitial generation at the interface and diffusion into the oxide. The model also explains the retarded diffusion of phosphorus observed for very long oxidation times.
KeywordsOxidation Rate Silicon Membrane Interstitial Concentration Silicon Lattice Bare Silicon
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