Implications of Oxidation Models on the Point Defect Behavior in the Silicon Substrate

  • P. B. Griffin
  • J. D. Plummer

Abstract

There is a strong coupling between oxidation and point defect processes in the bulk of the silicon. Some insight into the oxidation process itself can be gained by examining the interstitial generation at the Si/SiO2 interface. Oxidation models which span the growth kinetics of the oxide films and also the interstitial kinetics in the silicon substrate deserve to be taken seriously. We review some models which attempt this, and determine some essential common features of any plausible model.

Keywords

Oxidation Rate Point Defect Power Dependence Flux Component Surface Recombination Velocity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • P. B. Griffin
    • 1
  • J. D. Plummer
    • 1
  1. 1.Integrated Circuits LaboratoryStanford UniversityStanfordUSA

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