Effects of Deionized Water Rinses on Gate Oxide Leakage Currents

  • Mark A. Chonko

Abstract

Deionized (DI) water is used extensively in the manufacture of integrated circuits. It is particularly important in clean-ups prior to gate oxidations where it often follows an HF dip. DI water rinses can reduce the cleaning efficiencies of subsequent chemical treatments(1) and reduce the oxidation rate of silicon at room temperature.(2) Significant impact on the I–V characteristics of silicon dioxide by deionized water rinses are reported here. Leakage currents through a gate oxide increase with rinse time. Electron injection from a poly-silicon electrode increase much faster than from the substrate electrode. Currents can increase by many orders of magnitude. These increases are interpreted as arising from roughened oxide interfaces caused by a contamination layer.

Keywords

Leakage Current Gate Oxide Gate Bias Cleaning Efficiency Apparent Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K.D. Beyer and R.H. Kastl, J. Electrochem. Soc., 129, 1027 (1982)CrossRefGoogle Scholar
  2. 2.
    Licciardello et al, App. Phys. Lett., 48, 41 (1986)CrossRefGoogle Scholar
  3. 3.
    R.M. Anderson and D.R. Kerr, J. App. Phys., 48, 4834 (1977)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Mark A. Chonko
    • 1
  1. 1.Motorola, Inc.AustinUSA

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