Abstract
The effect of application of anhydrous HF gas to chemically cleaned silicon surfaces prior to thermal oxidation was examined. A comparison to a dilute hydrofluoric acid dip-rinse shows that the anhydrous HF preoxidation treatment leaves the silicon surface fluorinated but with slightly less carbon contamination and lower particulate contamination. SIMS and ESCA measurements have shown that in the course of subsequent thermal oxidation, fluorine undergoes redistribution in the oxide. Performance of gate oxides in terms of oxide breakdown statistics and interface charge density were studied using MOS capacitors.
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Duranko, G.T., Syverson, D.J., Zazzera, L.A., Ruzyllo, J., Frystak, D.C. (1988). Studies of Anhydrous HF Preoxidation Treatment of Silicon Surfaces. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_47
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_47
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