The Si-SiO2 Interface Roughness: Causes and Effects

  • P. O. Hahn
  • M. Grundner
  • A. Schnegg
  • H. Jacob


The structural properties of silicon surfaces and interfaces have been studied from a macroscopic to an atomic scale by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and optical methods (lightscattering, magic mirror). The chemical state of silicon surfaces prepared by different cleaning procedures which influences the roughening was analyzed using x-ray photoelectron (XPS) and high resolution electron energy loss spectroscopy (HREELS) measurements.

It is shown that thermal oxidation of silicon, in the course of device production, leads to a pronounced roughness at the Si-SiO2 interface. This in-terface roughness depends on the virgin silicon surface morphology and its chemical state, on bulk properties, and on the parameters of oxidation.

The influence of the interfacial structure in MOS inversion layers on electronic properties like mobility, interface states, fixed oxide charges, and on the dielectric breakdown behaviour will be demonstrated.


Root Mean Square Oxide Thickness Interface Roughness Submicron Range Polished Wafer 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • P. O. Hahn
    • 1
  • M. Grundner
    • 1
  • A. Schnegg
    • 1
  • H. Jacob
    • 1
  1. 1.Wacker Chemitronic GmbHResearch CenterBurghausenFRG

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