Defect Transformation Process at SiO2/Si Interfaces
The interface traps created by ionizing radiation or hot-electron injection in MOS capacitors have been found to undergo significant changes with time over an extended period (several months). Immediately after radiation or hot-electron damage, a interface trap peak above midgap (~ E v + 0.75eV) invariably appears. This peak, along with its background, would continuously change with time after damage, and one sailent feature of this change is the gradual conversion of this peak to a second peak located below midgap (~ E v + 0.35eV). The rate of this interfacial defect transformation process is a function of the device structure, its processing parameters, the details of the radiation or hot-electron treatment, the gate bias polarity, and the process is thermally activated. These and other pertinent results will be discussed.
KeywordsTime Dependent Behavior Gate Bias Interface Trap Defect Transformation Interface Trap Density
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