Low Temperature Conductance of Si-MOS Devices after Hot Carrier Degradation
We consider the temperature dependence of hot carrier induced degradation effects in MOS devices. It is shown that the degradation is caused by interface states near drain with an energy dependent density strongly peaked at the conduction band edge. The degradation behaviour with increasing stress time is investigated up to a defect density of 6 × 1012/cm2. Below l0 K, the conductance gate voltage characteristic of a degraded device shows evidence for quantum effects in the form of a resonant tunneling process which causes a peak-to-valley conductivity change by many orders of magnitude.
KeywordsInterface State Resonant Tunneling Conduction Band Edge Stress Time Oxide Charge
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- 1.R. B. Fair, R. C. Sun, IEEE Trans. Electr. Devices ED-28(1), 83 (1981)Google Scholar
- 2.S. L. von Bruns, R. L. Anderson, IEEE Trans. Electr. Devices ED-34(1), 75 (1987)Google Scholar
- 3.W. Weber, C. Werner, G. Dorda, IEEE Electr. Dev. Lett. EDL-5, 518 (1984)Google Scholar
- 4.A. Schwerin, W. H$nsch, W. Weber, IEEE Trans. Electr. Devices ED-34(12), 2493 (1987)Google Scholar
- 5.T. Poorter, P. Zoestbergen,in IEDM Tech. Dig. 100 (1984)Google Scholar
- 7.M. Bollu, A. Asenov, F. Koch, to be publishedGoogle Scholar
- 12.See for example C. Hu, S. C. Tam, F. Hsu, P. Ko, T. Chan, K. Terrill, IEEE Trans. Electr. Devices ED-32(2), 375 (1985)Google Scholar
- 13.M. Bollu, A. J. Madenach, F. Koch, J. Scholz, H. Stoll, in: Proceedings of 9th Intern. Conference on Noise in Physical Systems, ed. C. M. van Vliet, p. 217, World Scientific, Singapore (1987)Google Scholar