The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States
Random telegraph signals are observed in small-area silicon MOSFETs due to the fluctuations in occupancy of single defects residing in the oxide close to the oxide:silicon interface. We review the general properties of these signals and show that carrier capture proceeds via a multi-phonon process. Anomalies in the gate-voltage dependence of the capture time and estimates of the trap distance into the oxide are considered. We demonstrate that the former has its origin in a gate-voltage dependent cross-section, and the latter in a gate-voltage dependent trap entropy of ionisation for the device operating around threshold.
KeywordsGate Voltage Resistance Switching Gate Bias Emission Time Strong Inversion
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