The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

  • M. J. Kirton
  • M. J. Uren
  • S. Collins


Random telegraph signals are observed in small-area silicon MOSFETs due to the fluctuations in occupancy of single defects residing in the oxide close to the oxide:silicon interface. We review the general properties of these signals and show that carrier capture proceeds via a multi-phonon process. Anomalies in the gate-voltage dependence of the capture time and estimates of the trap distance into the oxide are considered. We demonstrate that the former has its origin in a gate-voltage dependent cross-section, and the latter in a gate-voltage dependent trap entropy of ionisation for the device operating around threshold.


Gate Voltage Resistance Switching Gate Bias Emission Time Strong Inversion 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • M. J. Kirton
    • 1
  • M. J. Uren
    • 1
  • S. Collins
    • 1
  1. 1.Royal Signals and Radar EstablishmentWorcestershireUK

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