The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

  • M. J. Kirton
  • M. J. Uren
  • S. Collins

Abstract

Random telegraph signals are observed in small-area silicon MOSFETs due to the fluctuations in occupancy of single defects residing in the oxide close to the oxide:silicon interface. We review the general properties of these signals and show that carrier capture proceeds via a multi-phonon process. Anomalies in the gate-voltage dependence of the capture time and estimates of the trap distance into the oxide are considered. We demonstrate that the former has its origin in a gate-voltage dependent cross-section, and the latter in a gate-voltage dependent trap entropy of ionisation for the device operating around threshold.

Keywords

Gate Voltage Resistance Switching Gate Bias Emission Time Strong Inversion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth and D.M. Tennent, Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface States and Low-Frequency (1/f?) Noise, Phys. Rev. Lett. 52: 228 (1984).CrossRefGoogle Scholar
  2. 2.
    M.J. Uren, D.J. Day and MJ Kirton, 1/f and Random Telegraph Noise in Silicon MOSFETs, Appl. Phys. Lett. 47: 1195 (1985).Google Scholar
  3. 3.
    MJ. Kirton and M.J. Uren, Capture and Emission Kinetics of Individual Si:SiO2 Interface States, Appl. Phys. Lett. 48: 1270 (1986).Google Scholar
  4. 4.
    M.J. Uren, M.J. Kirton and S. Collins, Anomalous Telegraph Noise in Small Area Silicon MOSFETS, Phys. Rev. B. (in press).Google Scholar
  5. 5.
    M.J. Uren, MJ. Kirton and S. Collins, Observation of “1/f-Noise States” in Conductance Measurements on MOS Structures, (this volume).Google Scholar
  6. 6.
    S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, (1981).Google Scholar
  7. 7.
    T. Ando, A.B. Fowler and F. Stern, Electronic Properties of Two-Dimensional Systems, Rev. Mod. Phys. 54: 437.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • M. J. Kirton
    • 1
  • M. J. Uren
    • 1
  • S. Collins
    • 1
  1. 1.Royal Signals and Radar EstablishmentWorcestershireUK

Personalised recommendations