Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon

  • Edward H. Poindexter
  • Philip J. Caplan
  • Gary J. Gerardi

Abstract

Major inherent and process-induced point defects in oxidized silicon wafers have been examined by electron spin resonance (ESR). The Pb center is found to occur in new variations in native-oxidized wafers. Furnace thermochemical treatments and, notably, the resultant oxide water disposition have a strong effect on the initial occurrence of Pb centers (main source of interface traps) and on Pb generation by electric fields or rapid thermal stress. Brief or gentle postoxidation anneals can have very significant effects on durable passivation. The radiochemical creation and annealing of implant-induced oxide point effects—the E′ (a charge trap), nonbridging oxygen hole center (NBOHC), and peroxy—are found to be generally similar, but not necessarily identical, to phenomena in well-studied bulk fused silica.

Keywords

Electron Spin Resonance Electron Spin Resonance Signal Rapid Thermal Annealing Interface Trap Steam Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Edward H. Poindexter
    • 1
  • Philip J. Caplan
    • 1
  • Gary J. Gerardi
    • 1
  1. 1.U.S. Army Electronics Technology and Devices LaboratoryFort MonmouthUSA

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