Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

  • D. L. Griscom
  • D. B. Brown
  • N. S. Saks


Molecular-scale models for the post-irradiation buildup of interface states in SiO2-on-Si structures are critically examined in light of (i) the natures of paramagnetic point defects in amorphous silicon djoxide known from electron spin resonance and (ii) recent electrical data1,2 obtained for γ-irradiated MOSFETs. Evidence is cited for the production of atomic hydrogen in the oxide layer, powered by the recombination of excitons (bound e-h pairs) at the sites of OH groups. There is strong new evidence2 that a small fraction (~1 %) of this H0 reacts directly with the interface to form electrically-active interface states. However, the majority of the radiolytic H0 may be converted to mobile protons by reaction with oxide trapped charges in the form of small polarons. Under such conditions, the field-aided drift of these protons to the interface is believed to be the rate limiting step in the long-term buildup of interface states.


Electron Spin Resonance Interface State Gate Bias Small Polaron Bulk Silica 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • D. L. Griscom
    • 1
  • D. B. Brown
    • 1
  • N. S. Saks
    • 1
  1. 1.Naval Research LaboratoryUSA

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