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Silicon Oxidation Models Based on Parallel Mechanisms

  • C. R. Helms
  • J. de Larios

Abstract

It has been suggested by numerous workers over the years that multiple mechanisms acting in parallel might be responsible for the growth of thermal oxides on silicon. The most obvious example of such an effect is oxidation in “wet” O2 where both H2O and O2 act in parallel to oxidize the silicon. In this paper these models will be reviewed in light of more recent data, and suggest a new model based on a combination of these mechanisms.

Keywords

Pressure Dependence Parallel Mechanism Interface Model Thin Oxide Thick Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • C. R. Helms
    • 1
  • J. de Larios
    • 1
  1. 1.Stanford Electronics LaboratoriesStanford UniversityStanfordUSA

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