Abstract
The electronic structure of the Si-SiO2 interface is discussed with emphasis on descriptions relating the density of states to the local chemical bonds. The bulk properties of Si and SiO2 are first considered and then used to derive the essential features of the interface. It is shown that recent photoemission measurements can be interpreted by the existence of valence alternation pairs. Finally the electronic properties of the Pb center are reviewed.
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Lannoo, M. (1988). Theoretical Calculations of the Electronic Structure in the Si-SiO2 Systems. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_29
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_29
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