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The Effect of Electrostatic Screening on Energy Positions of Spectra Near SiO2/Si Interfaces

  • R. Browning
  • M. A. Sobolewski
  • C. R. Helms

Abstract

XPS and Auger spectra of thin SiO2 films grown on Si substrates are shifted when compared with those from thick oxide films. The spectral features associated with the SiO2 films are shifted towards lower binding energies as the thickness of the film-decreases. Using an electrostatic image charge calculation it can be shown that a large part of these spectral shifts may simply be due to the proximity of the semiconducting substrate. This brings into question any model of the SiO2/Si interface based on these shifts.

Keywords

Spectral Shift Thin Oxide Lower Binding Energy Image Charge Electronic Screening 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • R. Browning
    • 1
  • M. A. Sobolewski
    • 1
  • C. R. Helms
    • 1
  1. 1.Stanford Electronics Laboratory Dept. of Electrical EngineeringStanford UniversityStanfordUSA

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