Dependence of SiO2/Si Interface Structures on Oxidation Process
The XPS depth profiling of oxide films grown on Si(100) surface has been used to investigate the dependence of SiO2/Si interface structures on oxidation process. Analysis of the XPS data indicates that almost abrupt and atomically flat interface is formed if oxidation time is shorter than stress relaxation time. The stress dependent oxide structures near the interface deduced from the measurements on chemical etching rate of the oxide films is also discussed.
KeywordsOxide Film Interface Structure Spectral Intensity Oxidation Time Si02 Film
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