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Dependence of SiO2/Si Interface Structures on Oxidation Process

  • Takeo Hattori
  • Hiroaki Yamagishi
  • Noboru Koike
  • Keitaro Imai
  • Kikuo Yamabe

Abstract

The XPS depth profiling of oxide films grown on Si(100) surface has been used to investigate the dependence of SiO2/Si interface structures on oxidation process. Analysis of the XPS data indicates that almost abrupt and atomically flat interface is formed if oxidation time is shorter than stress relaxation time. The stress dependent oxide structures near the interface deduced from the measurements on chemical etching rate of the oxide films is also discussed.

Keywords

Oxide Film Interface Structure Spectral Intensity Oxidation Time Si02 Film 
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References

  1. 1.
    T. Hattori and T. Suzuki, Appl. Phys. Lett., 43, 470 (1983).CrossRefGoogle Scholar
  2. 2.
    T. Suzuki, M. Muto, M. Hara, K. Yamabe and T. Hattori, Jpn. J. Appl. Phys., 25, 544 (1986).CrossRefGoogle Scholar
  3. 3.
    P. J. Grunthaner, M. Hecht, F. J. Grunthaner and N. M. Johnson, J. Appl. Phys., 61, 629 (1987).CrossRefGoogle Scholar
  4. 4.
    F. J. Grunthaner and P. J. Grunthaner, Mater. Sci. Rep., 1, 65 (1986).CrossRefGoogle Scholar
  5. 5.
    G. Hollinger and F. J. Himpsel, Appl. Phys. Lett., 44, 93 (1984).CrossRefGoogle Scholar
  6. 6.
    W. Braun and H. Kuhlenbeck, Surf. Sci., 180, 279 (1987).CrossRefGoogle Scholar
  7. 7.
    T. Hattori, M. Muto, T. Suzuki, K. Yamaha and H. Yamauchi, AIP Conf. Proc. No. 122, Proc. Int. Conf. on the Physics of VLSI, J. C. Knights, ed., p. 45 ( Am. Inst. of Physics, New York, 1984 ).Google Scholar
  8. 8.
    P. 0. Hahn and M. Henzler, J. Vac. Sci. & Technol., A2, 574 (1984).CrossRefGoogle Scholar
  9. 9.
    E. A. Irene, E. Tierney, and J. Angilello, J. Electrochem. Soc., 29, 2594 (1982).Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Takeo Hattori
    • 1
  • Hiroaki Yamagishi
    • 1
  • Noboru Koike
    • 1
  • Keitaro Imai
    • 2
  • Kikuo Yamabe
    • 2
  1. 1.Department of Electrical and Electronic EngineeringMusashi Inst. Technol.Setagaya-kuJapan
  2. 2.VLSI Research CenterToshiba Corp.Kawasaki 210Japan

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