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ARXPS Analysis of Si-SiO2-Interfaces

  • J. Halbritter

Abstract

Angle resolved x-ray photo electron spectroscopy (ARXPS) results in a very detailed analysis of minor amounts ( ≧ 0.3 nm) of interface compounds and their spatial distribution. First experimental results on the Si-SiO2interface used in microelectronics, are presented. The ARXPS results on plane, single cristalline (100) Si, oxidized to about 5nm SiO2, indicate a planar Si surface connected by about one monolayer Si* to a compressed SiO2 layer coated by amorphous SiO2. Seperated from this interface region Si cluster stabilized by a compressing SiO 2 * coating have been found in SiO2. Dehydrogenation is showing up in binding energy changes in SiO2 indicating that H or OH is not only saturating Si* but is bonded also to SiO2. The O deficiency of the amorphous SiO2−x coating is increasing towards the outer SiO2 surface.

Keywords

Shape Function Strain Relaxation Interface Oxide Thick Oxide Si02 Coating 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • J. Halbritter
    • 1
  1. 1.Kernforschungszentrum Karlsruhe GmbH Institut für Kernphysik IIKarlsruheFederal Republic of Germany

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