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Microscopic Structure Of The SiO2/Si Interface

  • F. J. Himpsel
  • F. R. McFeely
  • A. Taleb-Ibrahimi
  • J. A. Yarmoff
  • G. Hollinger

Abstract

The bonding of Si atoms at the SiO2/Si interface is determined via high-resolution core level spectroscopy with synchrotron radiation. For oxides grown in pure O2, the SiO2/Si interface is found to contain Si atoms in intermediate oxidation states with a density of 1.5 ± 0.5 × 1015 cm−2. From the density and distribution of intermediate oxidation states, models of the interface structure are obtained. The interface is not abrupt, as evidenced by the non-ideal distribution of intermediate oxidation states and their high density (about 2 monolayers of Si). The finite width of the interface is explained by the bond density mismatch between SiO2 and Si. Annealing in H2 is found to influence the electrical parameters by removing the Pb centers that pin the Fermi level. The distribution of intermediate oxidation states is not affected.

Keywords

Core Level Core Level Spectrum Bond Density Strain Energy Minimization Thin Si02 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    S. T. Pantelides and Marshall Long, in The Physics of Si0 2 and its Interfaces, ed. Sokrates T. Pantelides, ( Pergamon Press, NY, 1978 ) p. 339.Google Scholar
  2. 2.
    F. Herman and I. P. Batra, The Physics of Si0 2 and its Interfaces, ed. Sokrates T. Pantelides, ( Pergamon Press, NY, 1978 ) p. 333.Google Scholar
  3. 3.
    F. Herman, and R. V. Kasowski, J. Vac. Sci. Technol. 19 (3), 395 (1981).CrossRefGoogle Scholar
  4. 4.
    T. Hattori, M. Muto, and T. Suzuki, Proceedings of the 17th International Conference on the Physics of Semiconductors, ed. by D. J. Chadi and W. Harrison ( Springer-Verlag, New York 1985 ), p. 229.Google Scholar
  5. 5.
    F.Rochet, S. Rigo, M. Froment, C. D’Anterroches, C. Maillot, H. Roulet and G. Dufour, Adv. in Phys. 35, 237 (1986).Google Scholar
  6. 6.
    A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Lett. 59, 213 (1987).CrossRefGoogle Scholar
  7. 7.
    I. Ohdomari, H. Akatsu, Y. Yamakoshi, and Koji Kishimoto, J. of Non-Crys. Solids 89, 239 (1987).CrossRefGoogle Scholar
  8. 8.
    I. Ohdomari, H. Akatsu, Y. Yamakoshi, and K Kishimoto, J. Appl. Phys. 62, 3751 (1987).CrossRefGoogle Scholar
  9. 9.
    F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, and A. Madhukar, Phys. Rev. Lett. 43, 1683 (1979)CrossRefGoogle Scholar
  10. F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, and A. Madhukar, J.Vac. Sci. Technol. 16, 1443 (1979).Google Scholar
  11. 10.
    G. Hollinger and F. J. Himpsel, Appl. Phys. Lett. 44, 93 (1984).CrossRefGoogle Scholar
  12. 11.
    For a detailed account of our work see F. J. Himpsel, R. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B, to be published.Google Scholar
  13. 12.
    N. M. Johnson, D. K. Biegelsen, M. D. Moyer, and S. T. Chang, Appl. Phys. Lett. 43, 563 (1983).CrossRefGoogle Scholar
  14. 13.
    P. J. Grunthaner, M. H. Hecht, and F. J. Grunthaner, J. Appl. Phys. 61, 629 (1987).CrossRefGoogle Scholar
  15. 14.
    It has been found that a Si surface etched in aqueous HF solution is terminated mainly by hydrogen, see E. Yablonovitch, D.L. Allara, C.C.Chang, T. Gmitter, and T.B. Bright, Phys. Rev. Lett. 57, 149 (1986), and B. S. Meyerson, F. J. Himpsel, and J. A. Yarmoff, unpublished.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • F. J. Himpsel
    • 1
  • F. R. McFeely
    • 1
  • A. Taleb-Ibrahimi
    • 1
  • J. A. Yarmoff
    • 1
  • G. Hollinger
    • 2
  1. 1.T. J. Watson Research CenterIBM Research DivisionYorktown HeightsUSA
  2. 2.Laboratoire d’Electronique Automatique et Mesures ElectriquesEcole Centrale de LyonEcully CedexFrance

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