The Microstructure of SiO2-Si(100) Interfaces Investigated by XPS and HRTEM

  • G. Hollinger
  • R. Saoudi
  • P. Ferret
  • M. Pitaval


Thin oxides (20–100 A) grown on Si(100) surfaces using a variety of oxidation processes were examined by X-ray Photoelectron Spectroscopy (XPS) and cross sectional Transmission Electron Microscopy (TEM). Device quality oxides exhibit flat but not ideal interfaces and extended chemical transition layers with about 2 monolayers of suboxide Si atoms.


Thin Oxide Flat Interface Rough Interface Sectional Transmission Electron Microscopy Device Quality 
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  1. 1.
    C. D’Anterroches, J.Microsc. Spectrosc.Electron. 9, 147 (1984)Google Scholar
  2. 2.
    S.M. Goodnick, D.K. Ferry, C.W. Wilmsen, Z. Liliental, D. Fathy, O.L. Krivanek, Phys.Rev.B 32, 8171 (1985)CrossRefGoogle Scholar
  3. 3.
    A.H. Carim, and R. Sinclair, J.Electrochem.Soc. 134, 741 (1987)CrossRefGoogle Scholar
  4. 4.
    A. Ourmazd, D.W. Taylor, J.A. Rentschler and J. Bevk, Phys.Rev.Lett. 59, 213 (1987)CrossRefGoogle Scholar
  5. 5.
    F. Rochet, S. Rigo, M. Froment, C. D’Anterroches, C. Maillot, H. Roulet, G. Dufour, Adv.Phys. 35, 237 (1986)CrossRefGoogle Scholar
  6. 6.
    P.H. Fuoss, L.J. Norton, S. Brennan, A. Fischer-Colbrie, Phys.Rev.Lett. 60, 600 (1988)CrossRefGoogle Scholar
  7. 7.
    G. Hollinger and F.J. Himpsel, Appl.Phys.Lett. 44, 93 (1984)CrossRefGoogle Scholar
  8. 8.
    P.J. Grunthaner, M.H. Hecht, F.J. Grunthaner, N.M. Johnson, J.Appl.Phys. 61, 629 (1987)CrossRefGoogle Scholar
  9. 9.
    F.J. Himpsel, F.R. Mc Feely, A. Taleb-Ibrahimi, J.A. Yarmoff and G. Hollinger, Phys.Rev.B (to be published)Google Scholar
  10. 10.
    G.Sarrabayrouse and M. Prom (unpublished)Google Scholar
  11. 11.
    F. Gaspard, A. Halimaoui and G. Sarrabayrouse, Revue Phys.Appl. 22, 65 (1987)CrossRefGoogle Scholar
  12. 12.
    A.H. Carim, A. Bhattacharyya, Appl.Phys.Lett. 46, 872 (1985)Google Scholar
  13. 13.
    M. Dupuy, J.Microsc.Spectrosc.Electron. 9, 163 (1984)Google Scholar
  14. 14.
    J.M. Hill, D.G. Royce, U.S. Fadley, L.F. Wagner and F.J. Grunthaner, Chem.Phys.Lett. 44, 225 (1976)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. Hollinger
    • 1
  • R. Saoudi
    • 1
  • P. Ferret
    • 2
  • M. Pitaval
    • 2
  1. 1.Laboratoire d’ElectroniqueEcole Centrale de LyonEcully CedexFrance
  2. 2.Département de Physique des MatériauxUCB Lyon 1Villeurbanne CedexFrance

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