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The Microstructure of SiO2-Si(100) Interfaces Investigated by XPS and HRTEM

  • G. Hollinger
  • R. Saoudi
  • P. Ferret
  • M. Pitaval

Abstract

Thin oxides (20–100 A) grown on Si(100) surfaces using a variety of oxidation processes were examined by X-ray Photoelectron Spectroscopy (XPS) and cross sectional Transmission Electron Microscopy (TEM). Device quality oxides exhibit flat but not ideal interfaces and extended chemical transition layers with about 2 monolayers of suboxide Si atoms.

Keywords

Thin Oxide Flat Interface Rough Interface Sectional Transmission Electron Microscopy Device Quality 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. Hollinger
    • 1
  • R. Saoudi
    • 1
  • P. Ferret
    • 2
  • M. Pitaval
    • 2
  1. 1.Laboratoire d’ElectroniqueEcole Centrale de LyonEcully CedexFrance
  2. 2.Département de Physique des MatériauxUCB Lyon 1Villeurbanne CedexFrance

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