The Stoichiometry and Structure of the Si/SiO2 Interface: Ion Scattering Studies
High energy ion scattering combined with particle channeling is an interfacial probe which reveals information on the stoichiometry and structure of an amorphous/crystalline interface.1,2 In early studies the technique was extensively applied to probing the Si/SiO2 interface in a standard channeling geometry.3–6 The original interpretation of these results was somewhat confused by a lack of understanding of the basic surface interactions associated with MeV channeling.3 Theory and experiments on atomically clean surfaces quickly resolved the difficulty.1 The final results of these early studies were as follows: The oxide is stoichiometric to within ~5Å of the interface and there is either: 1) one monolayer of reconstructed Si and ~5Å of nonstoichiometric oxide or 2) two monolayers of reconstructed Si. These results held for Si(100) and Si(110).
KeywordsSurface Reconstruction Atomic Displacement Clean Surface Substitutional Site Strained Layer
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