The Structure of the Si/SiO2 Interface: A Review

  • A. Ourmazd
  • J. Bevk

Abstract

We briefly review the structure of the Si/SiO 2 interface, so far as it is known, and present new results on the atomic structure of the interface, when atomically flat Si(100) surfaces are oxidised under a variety of conditions. In all cases we observe a crystalline interfacial layer. On the basis of diffraction, lattice imaging and photoemission spectroscopy data, we discuss the possible atomic configurations of the interface.

Keywords

Molecular Beam Epitaxy Interfacial Phase Lattice Image Si02 System Interfacial Roughness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    F. Herman and I. P Batra, Physics of SiO2 and its Interfaces, ed. S. Pantelides ( Pergamon, New York, 1978 ) p. 333.Google Scholar
  2. [2]
    A. M. Stoneham, C. R. M. Grovenor and A. Cerezo, Phil. Mag. B 55, 201 (1987).Google Scholar
  3. [3]
    S. Pantelides and M. Long, Physics of SiO2 and its Interfaces, ed. S. Pantelides ( Pergamon, New York, 1978 ), p. 339.Google Scholar
  4. [4]
    P. H. Fuoss, L. J. Norton, S. Brennan and A. Fischer-Colbrie, Phys. Rev. Lett. 60, 600 (1988).CrossRefGoogle Scholar
  5. [5]
    F. M. Ross and W. M. Stobbs, Proc. of MRS Fall Meeting, Boston (1987), in press.Google Scholar
  6. [6]
    F. Rochet, S. Rigo, M. Froment, C. d’Anterroches, C. Maillot, H. Roulet and G. Dufour, Advances in Phys. 35, 237 (1986).CrossRefGoogle Scholar
  7. [7]
    B. Agius, S. Rigo, F. Rochet, M. Froment, C. Maillot, H. Roulet and G. Dufour, Appl. Phys. Lett. 44, 48 (1984).CrossRefGoogle Scholar
  8. [8]
    P. O. Hahn and M. Henzler, J. Vac. Sci. Technol. A 2, 574 (1984).Google Scholar
  9. [9]
    O. L Krivanek, T. T. Sheng and D. C. Tsui, Appl. Phys. Lett. 32, 437 (1978).CrossRefGoogle Scholar
  10. [10]
    A. Ourmazd, K Ahlborn, K Ibeh and T. Honda, Appl. Phys. Lett. 47, 685 (1985).CrossRefGoogle Scholar
  11. [11]
    M. A. O’Keefe, P. R. Busek and S. lijima, Nature 274, 322 (1978).CrossRefGoogle Scholar
  12. [12]
    S. M. Goodnick, D. K Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy and O. L. Krivanek, Phys. Rev. B 32, 8171 (1985).CrossRefGoogle Scholar
  13. [13]
    A. H. Carim and R. Sinclair, J. Electrochem. Soc. 134, 741 (1987).CrossRefGoogle Scholar
  14. [14]
    A. Ourmazd, W. T. Tsang, J. A. Rentschler and D. W. Taylor, Appl. Phys. Lett. 50, 1417 (1987).CrossRefGoogle Scholar
  15. [15]
    A. H. Carini and R. Sinclair, Materials Lett. 5, 94 (1987).CrossRefGoogle Scholar
  16. [16]
    A. Ourmazd, D. W. Taylor, J. A. Renstchler and J. Bevk, Phys. Rev. Lett. 59, 213 (1987).CrossRefGoogle Scholar
  17. [17]
    A. Ourmazd and J. Bevk, Proc. of MRS Fall Meeting, Boston (1987), in press.Google Scholar
  18. [18]
    A. Ourmazd, J. A. Renstchler and J. Bevk, to be published.Google Scholar
  19. [19]
    V. G. Hill and R. Roy, Trans. Br. Ceram. Soc. 57, 496 (1958).Google Scholar
  20. [20]
    W. A. Dollase, Acta Crystallogr. 23, 617 (1967).CrossRefGoogle Scholar
  21. [21]
    W. B. Fowler and A. X. Chu, private communication.Google Scholar
  22. [22]
    P. H. Grunthaner, M. H. Hecht, F. J. Grunthaner and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).CrossRefGoogle Scholar
  23. [23]
    G. Hollinger and F. J. Himpsel, Appl. Phys. Lett. 44, 93 (1984).CrossRefGoogle Scholar
  24. [24]
    J. F. Morar, private communication.Google Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • A. Ourmazd
    • 1
  • J. Bevk
    • 2
  1. 1.AT&T Bell LaboratoriesHolmdelUSA
  2. 2.AT&T Bell LaboratoriesMurray HillUSA

Personalised recommendations