Abstract
We briefly review the structure of the Si/SiO 2 interface, so far as it is known, and present new results on the atomic structure of the interface, when atomically flat Si(100) surfaces are oxidised under a variety of conditions. In all cases we observe a crystalline interfacial layer. On the basis of diffraction, lattice imaging and photoemission spectroscopy data, we discuss the possible atomic configurations of the interface.
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Ourmazd, A., Bevk, J. (1988). The Structure of the Si/SiO 2 Interface: A Review. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_20
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_20
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