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Oxidation of Silicon: Tests of Mechanisms

  • Robert H. Doremus

Abstract

Oxidation thicknesses for silicon in oxygen above 1100°C and for certain silicides are proportional to square root time (parabolic kinetics). The absolute value and temperature dependence of these results match closely with measurements of the permeation of molecular oxygen through bulk amorphous silica. Deviations from parabolic kinetics are accompanied by a decrease in the parabolic growth coefficient. No evidence for surface reactions influencing kinetics is found. A model involving strain in the oxide layer can account for the deviations from parabolic kinetics and the decrease in oxygen permeation through the oxide.

Keywords

Oxide Film Silicon Nitride Interfacial Reaction Amorphous Silica Lattice Oxygen 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Robert H. Doremus
    • 1
  1. 1.Materials Engineering DepartmentRensselaer Polytechnic InstituteTroyUSA

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