Abstract
Oxidation thicknesses for silicon in oxygen above 1100°C and for certain silicides are proportional to square root time (parabolic kinetics). The absolute value and temperature dependence of these results match closely with measurements of the permeation of molecular oxygen through bulk amorphous silica. Deviations from parabolic kinetics are accompanied by a decrease in the parabolic growth coefficient. No evidence for surface reactions influencing kinetics is found. A model involving strain in the oxide layer can account for the deviations from parabolic kinetics and the decrease in oxygen permeation through the oxide.
“He said, that new systems of nature were but new fashions, which would vary in every age; and even those who pretend to demonstrate them from mathematical principles, would fluorish but a short period of time, and be out of vogue when that was determined.” -Swift
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Doremus, R.H. (1988). Oxidation of Silicon: Tests of Mechanisms. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_2
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_2
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