Abstract
The reversible annealing of E' centers (paramagnetic bridging oxygen vacancies) in a-Si02 at temperatures lower than about 300°C was studied by electron paramagnetic resonance (EPR) spectroscopy in samples of bulk dry a-SiO2 which were specially prepared with widely differing amounts of dissolved O2. It was found that all decreases in E' concentrations were exactly matched by increases in corresponding SiOO- (superoxide radical) concentrations, and that there was a pronounced persistence of E' centers at higher temperatures in oxygen-deficient samples. The annealing process was modelled by a diffusion-limited quasi-unimolecular reaction between dissolved O2 and fixed trapping centers in the context of the continuous time random walk (CTRW) formalism.
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Pfeffer, R.L. (1988). Molecular Diffusion in a-SiO2: Its Role in Annealing Radiation-Induced Defect Centers. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_18
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_18
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