Molecular Diffusion in a-SiO2: Its Role in Annealing Radiation-Induced Defect Centers

  • Robert L. Pfeffer


The reversible annealing of E' centers (paramagnetic bridging oxygen vacancies) in a-Si02 at temperatures lower than about 300°C was studied by electron paramagnetic resonance (EPR) spectroscopy in samples of bulk dry a-SiO2 which were specially prepared with widely differing amounts of dissolved O2. It was found that all decreases in E' concentrations were exactly matched by increases in corresponding SiOO- (superoxide radical) concentrations, and that there was a pronounced persistence of E' centers at higher temperatures in oxygen-deficient samples. The annealing process was modelled by a diffusion-limited quasi-unimolecular reaction between dissolved O2 and fixed trapping centers in the context of the continuous time random walk (CTRW) formalism.


Electron Paramagnetic Resonance Continuous Time Random Walk Spin Concentration Annealing Kinetic Degas Sample 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).CrossRefGoogle Scholar
  2. 2.
    R. L. Pfeffer, J. Appl. Phys. 57, 5176 (1985) and refs. cited.Google Scholar
  3. 3.
    R. A. B. Devine and C. Fiori, J. Appl. Phys. 58, 3368 (1985).CrossRefGoogle Scholar
  4. 4.
    A. Golanski, R. A. B. Devine, and J. C. Oberlin, J. Appl. Phys. 56, 1572 (1984).CrossRefGoogle Scholar
  5. 5.
    A. H. Edwards and W. B. Fowler, Phys. Rev. B26, 6649 (1982).CrossRefGoogle Scholar
  6. 6.
    D. B. Brown, D. I. Ma, C. M. Dozier, and M. C. Peckerar, IEEE Trans. Nucl. Sci. NS-30, 4059 (1983); A. Golanski and T. Nicolle, in Induced Defects in Insulators, ed. by P. Mazzoldi (Materials Research Society, 1984 ), p. 255.Google Scholar
  7. 7.
    T. R. Waite, Phys. Rev. 107, 463 (1957).CrossRefGoogle Scholar
  8. 8.
    R. A. B. Devine, J. Appl. Phys. 58, 716 (1984); A. Golanski and T. Nicolle, op cit.Google Scholar
  9. 9.
    L. Anderson and D. A. Stuart, J. Am. Ceram. Soc. 37, 573 (1954).CrossRefGoogle Scholar
  10. 10.
    R. L. Pfeffer and D. L. Griscom, “Annealing Kinetics of Radiation-Induced Defect Centers in Pressure-Treated Si02: an EPR Study”, presented at the Conference on Radiation Effects in Insulators 3, Guildford, Surrey, UK, 15–19 July 1985 (unpublished).Google Scholar
  11. 11.
    R. L. Pfeffer, “Transformation of Radiation-Induced Defect Centers as a Probe of Molecular Diffusion in a-Si02”, in Proceedings, Conference on the Physics and Technology of Amorphous Silica, Les Arcs, France, 29 June -3 July 1987, ed. by R. A. B. Devine (in press).Google Scholar
  12. 12.
    F. J. Norton, Nature 191, 701 (1961).CrossRefGoogle Scholar
  13. 13.
    A. Blumen, G. Zumofen, and J. Klafter, Phys. Rev. B30, 5379 (1984).CrossRefGoogle Scholar
  14. 14.
    S. Redner and K. Kang, J. Phys. A: Math. Gen. 17, L451 (1984).CrossRefGoogle Scholar
  15. 15.
    A. Blumen, J. Klafter, and G. Zumofen, “Models for Reaction Dynamics in Glasses”, in Optical Spectroscopy of Glasses, ed. by I. Zschokke (D. Reidel Publishing Co., 1986 ) p. 199.CrossRefGoogle Scholar
  16. 16.
    E. W. Montroll and G. H. Weiss, J. Math. Phys. 6, 167 (1965).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Robert L. Pfeffer
    • 1
  1. 1.US Army Electronics Technology and Devices Laboratory (LABCOM)Fort MonmouthUSA

Personalised recommendations