Local Atomic Structure of Thermally Grown SiO2 Films

  • G. Lucovsky
  • J. T. Fitch
  • E. Kobeda
  • E. A. Irene


We have grown thin films of SiO2 by thermal oxidation of crystalline silicon and have determined as functions of the growth and annealing conditions: (1) the frequency, v, and line-width, ∆v,of the Si-O infrared (ir) active bond-stretching absorption band; (2) the index of refraction, n, at 632.8 nm; and (3) the intrinsic in-plane film stress, σx(SiO2). Linear relationships between; (1) ∆v and v, and (2) n and v, are explained in terms of a microscopic model in which the determinant atomic scale variable is the bond-angle, 2θ, at the oxygen atom site. Using this model, we have been able to obtain an approximate value of the in-plane Young’s modulus for SiO2 from a combinatidn of stress and ir measurements.


Oxide Film Thermal Oxide Oxide Thickness Thermally Grown Oxide Si02 Film 
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  1. 1.
    G. Lucovsky, M.J. Mantini, S.K. Srivastava and E.A. Irene, J. Vac. Sci. Technol. B5, 530 (1987).CrossRefGoogle Scholar
  2. 2.
    J.T. Fitch and G. Lucovsky, Mater. Res. Soc. Proc. 92, 89 (1987).CrossRefGoogle Scholar
  3. 3.
    J.T. Fitch and G. Lucovsky, Amer. Inst. of Phys. Conf. Proc., AVS Sub-series (1988), in press.Google Scholar
  4. 4.
    J.T. Fitch and G. Lucovsky, Mater. Res. Soc. Proc. (Spring 1987 Meeting), in press.Google Scholar
  5. 5.
    P.D. Richard, R.J. Markunas, G. Lucovsky, G.G. Fountain, A.N. Mansour and D.V. Tsu, J. Vac. Sci. Technol. A3, 867 (1985).CrossRefGoogle Scholar
  6. 6.
    G. Lucovsky and D.V. Tsu, J.Vac. Sci. Technol. A5, 2231 (1987).CrossRefGoogle Scholar
  7. 7.
    D.V. Tsu, S.S. Kim and G. Lucovsky, these proceedingsGoogle Scholar
  8. 8.
    E. Kobeda and E.A. Irene, J.Vac. Sci. Technol. B4, 720 (1986).CrossRefGoogle Scholar
  9. 9.
    E. Kobeda, J.T. Fitch, G. Lucovsky and E.A. Irene, private communication.Google Scholar
  10. 10.
    R.J. Bell and P. Dean, Nature 212, 1353 (1966).CrossRefGoogle Scholar
  11. 11.
    R.L. Mozzi and B.E. Warren, J. Appl. Cryst. 2, 164 (1969).CrossRefGoogle Scholar
  12. 12.
    I. Simon, in Modem Aspects of the Vitreous State, ed. by J.D. McKenzie ( Butterworths, London, 1960 ), p. 120.Google Scholar
  13. 13.
    F.L. Galeener, Phys. Rev. B19, 4292 (1979); F.L. Galeener and P.N. Sen, ibid. B17, 1928 (1978).Google Scholar
  14. 14.
    J.E. Stansworth, Physical Properties of Glasses ( CLarendon, Oxford, 1950 ), p. 56.Google Scholar
  15. 15.
    M.D. Newton and G.V. Gibbs, Phys. Chem. Miner. 6, 221 (1980).CrossRefGoogle Scholar
  16. 16.
    A.K. Sinha, H.J. Levinstein and T.E. Smith, J. Appl. Phys. 49, 2423 (1978).CrossRefGoogle Scholar
  17. 17.
    B.E. Deal, M. Sklar, A.S. Grove and E.H. Snow, J. Electrochem. Soc. 114, 266 (1967).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. Lucovsky
    • 1
  • J. T. Fitch
    • 1
  • E. Kobeda
    • 2
  • E. A. Irene
    • 2
  1. 1.Departments of Physics and Materials Science and EngineeringNorth Carolina State UniversityRaleighUSA
  2. 2.Department of ChemistryUniversity of North Carolina at Chapel HillChapel HillUSA

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