Local Atomic Structure of Thermally Grown SiO2 Films
We have grown thin films of SiO2 by thermal oxidation of crystalline silicon and have determined as functions of the growth and annealing conditions: (1) the frequency, v, and line-width, ∆v,of the Si-O infrared (ir) active bond-stretching absorption band; (2) the index of refraction, n, at 632.8 nm; and (3) the intrinsic in-plane film stress, σx(SiO2). Linear relationships between; (1) ∆v and v, and (2) n and v, are explained in terms of a microscopic model in which the determinant atomic scale variable is the bond-angle, 2θ, at the oxygen atom site. Using this model, we have been able to obtain an approximate value of the in-plane Young’s modulus for SiO2 from a combinatidn of stress and ir measurements.
KeywordsOxide Film Thermal Oxide Oxide Thickness Thermally Grown Oxide Si02 Film
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- 3.J.T. Fitch and G. Lucovsky, Amer. Inst. of Phys. Conf. Proc., AVS Sub-series (1988), in press.Google Scholar
- 4.J.T. Fitch and G. Lucovsky, Mater. Res. Soc. Proc. (Spring 1987 Meeting), in press.Google Scholar
- 7.D.V. Tsu, S.S. Kim and G. Lucovsky, these proceedingsGoogle Scholar
- 9.E. Kobeda, J.T. Fitch, G. Lucovsky and E.A. Irene, private communication.Google Scholar
- 12.I. Simon, in Modem Aspects of the Vitreous State, ed. by J.D. McKenzie ( Butterworths, London, 1960 ), p. 120.Google Scholar
- 13.F.L. Galeener, Phys. Rev. B19, 4292 (1979); F.L. Galeener and P.N. Sen, ibid. B17, 1928 (1978).Google Scholar
- 14.J.E. Stansworth, Physical Properties of Glasses ( CLarendon, Oxford, 1950 ), p. 56.Google Scholar