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Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

  • D. V. Tsu
  • S. S. Kim
  • G. Lucovsky

Abstract

This paper discusses the growth of thin films of silicon dioxide (SiO2) by the process of remote plasma enhanced chemical vapor deposition (RPECVD). For comparison, we also discuss the deposition of silicon nitride and oxynitride films by the same RPECVD technique. We describe; (1) the deposition process chamber and reaction pathways; (2) the characterization of the local atomic structure in the deposited thin films: and (3) the applications of dielectric thin films in metal insulator semiconductor (MIS) structures.

Keywords

Silicon Nitride Reflection High Energy Electron Diffraction Metal Insulator Semiconductor Dielectric Thin Film Silicon Oxide Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • D. V. Tsu
    • 1
  • S. S. Kim
    • 1
  • G. Lucovsky
    • 1
  1. 1.Departments of Physics, and Materials Science and EngineeringNorth Carolina State UniversityRaleighUSA

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