A Novel Silicon Oxidation Method — HF Enhanced Oxidation
In this paper, we report a new silicon oxidation method, at least one order magnitude higher in oxide growth rate can be achieved by only addition of a few thousand PPM HF to the pure oxygen gas. After rapid HF doped oxidation and subsequent annealing at low temperature (800°C) in pure oxygen, high quality gate oxide for VLSI can be obtained, which exhibits a tight distribution in thickness and breakdown voltage measurements leading to a defect densities about 2/cm2, and intrinsic breakdown events more than 99%. The interface charge densities are very low, and the Si/SiO2 interfaces are nearly atomically flat as revealed by HREM at 200K magnification. These superior properties of the SiO2 thin films would very promise for VLSI application.
KeywordsHigh Resolution Transmission Electron Microscopy Oxide Thickness Si02 Film Post Annealing Oxide Growth Rate
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- A. Bhattacharyya, and C. Vorst, J. Electrochem. Soc., 132, 1900 (1985).Google Scholar
- M.Morita, S. Aritome, M. Tsukde and M. Hirose, IEDM, 144 (1984).Google Scholar
- E.A. Irene, J. Electrochem. Soc., 125, 1708 (1976).Google Scholar
- Wells, “Structure Inorganic Chemistry”, Oxford Press, 3rd Edition, 786–808 (1962).Google Scholar