Oxidation Kinetics of Si in Dry CO2

  • Tadashi Sakon
  • J. B. WagnerJr.

Abstract

Oxidation kinetics of p-type (100) silicon in 1 atm dry carbon dioxide-carbon monoxide-argon gas mixture were examined using thermogravimetry. The kinetics follow the parallel diffusion model originally proposed by Han et al. for oxidation in dry oxygen. The oxidation rates are governed by only the partial pressure of carbon dioxide, and they are independent of the partial pressures of carbon monoxide and oxygen. The possible reaction mechanism is proposed, where the dominant diffusion species and less dominant species are the interstitial oxygen molecule and oxygen vacancy.

Keywords

Oxygen Vacancy Oxidation Rate Oxidation Kinetic Si02 Film Weight Gain Curve 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Tadashi Sakon
    • 1
  • J. B. WagnerJr.
    • 1
  1. 1.Center for Solid State ScienceArizona State UniversityTempeUSA

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