Plasma Induced Deposition of Copper Films on Polymer Surfaces
Thin copper films have been deposited on Kapton® and silicon substrates by reducing films of copper formate in a hydrogen RF discharge. Auger electron spectroscopy (AES) analysis and X-ray diffractometry (XRD) have been used to characterize the films. The oxygen content of the as-deposited copper films has been reduced to about 1% by annealing in a hydrogen ambient at about 300°C. However, only the upper 20–25 nm thick surface layers of the films were found to be rich (>90%) in copper. The remainder of the film was contaminated with carbon and traces of iron. Process conditions that may minimize the carbon content in the bulk of the film are discussed. A new laser ablation technique appears to be more promising.
KeywordsHydrogen Plasma Copper Film Copper Chloride Copper Formate Laser Ablation Technique
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