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Accurate Structural Characterization of ZrN Coatings and Epitaxial Layers by X-Ray Diffraction Using the DOSOPHATEX System

  • R. Y. Fillit
  • A. J. Perry
  • J. Pol Dodelet
  • G. Perrier
  • R. Philippe

Abstract

Thin film characterization by X-Ray methods is often difficult because of the problems of preferred crystal orientations and residual stresses. For example, it is well known that coatings made by physical vapor deposition are very strongly textured so that measurements of residual stress by classical X-Ray methods are very inaccurate. Furthermore, the characterization of epitaxial thin layers of semi-conductors requires very accurate determination of crystal orientations and interfacial misfits.

Keywords

Residual Stress Pole Figure Epitaxial Layer GaAs Layer ZnSe Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • R. Y. Fillit
    • 1
  • A. J. Perry
    • 2
  • J. Pol Dodelet
    • 3
  • G. Perrier
    • 4
  • R. Philippe
    • 4
  1. 1.ENS des MinesSaint-EtienneFrance
  2. 2.GTE Valenite CorporationTroyUSA
  3. 3.INRS EnergieVarennesCanada
  4. 4.IUTSaint-EtienneFrance

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