Submicron Patterning Techniques for Integrated Circuits

  • W. Beinvogl
  • A. Gutmann
Part of the NATO ASI Series book series (NSSB, volume 281)

Abstract

The development of integrated circuits with ever increasing density has pushed the requirements on fine patterning technology into the submicron region during the late 80’s and device design rules will cross the 0.5μm barrier on a production level towards the middle of this decade. Optical lithography is the by far prevailing method presently, x-ray lithography has entered the pilot line evaluation phase. Whether or at what time optical lithography might lose its dominating role in IC mass production remains an open question to be answered by the upcoming technological improvements and the economic performances of the lithographic techniques competing with each other. The topics discussed in this paper are limited to optical lithography which will maintain it’s position as the industrial workhorse at least for several years. After a discussion of the lithography requirements in the next section, a discussion of resist materials for the relevant wavelength regions followed by examples for enhanced lithographic processes will be given. For transferring the lithographically generated patterns into underlying materials dry etching became the standard method during the 80’s. This field is characterized by an increasing diversity both with respect to technical methods and involved chemistries due to the large number of different materials to be etched. In addition to the wellknown patterning of various layers into fine patterns, deep trench/groove etching into the semiconductor substrate as well as blanket planarizing etchback became important applications. These two items will be addressed in the section on dry etching after a short view over requirements and methods in the dry etching field.

Keywords

Numerical Aperture Optical Lithography Minimum Feature Size Microelectronic Engineer Contact Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. (1).
    A. Gutmann, J. Binder, G. Czech, J. Karl, L Mader, D. Sarlette and W. Henke, SPIE 1990, Proceedings to be published.Google Scholar
  2. (2).
    B. Davari et. al., IEDM Tech. Dig. 1989, 61-64.Google Scholar
  3. (3).
    H. Fukuda, N. Hasegawa and S. Okazaki, J. Vac. Sci. Technol B7 (4), Jul./Aug. 1989, 667.Google Scholar
  4. (4).
    M. K. Templeton, C. R. Szmanda and A. Zampini, SPIE Vol.771 (1987), 136.CrossRefGoogle Scholar
  5. (5).
    P. Trefonas III, B.K. Daniels and R. L. Fischer, Jr., Solid State Technology, August 1987,131.Google Scholar
  6. (6).
    S. Nakamura, K. Matsumoto, K. Ushida and Masaomi Kameyama, SPIE 1990, to be published.Google Scholar
  7. (7).
    A. Gutmann, A. Kleinhaus and W. Bade, Microelectronic Engineering 3 (1985), 329.CrossRefGoogle Scholar
  8. (8).
    W. H.-L Ma, SPIE Vol. 333, Submicron Lithography, (1982), 19.Google Scholar
  9. (9).
    “Photoreactive Polymers”, A. Reiser, J. Wiley & Sons (1989), Chapter 7, “Deep UV Lithography”.Google Scholar
  10. (10).
    J. R. Sheats, Solid State Technology, June 1989, 79.Google Scholar
  11. (11).
    M. J. O’Brien and J. V. Crivello, SPIE Vol. 920 (1988), 42.CrossRefGoogle Scholar
  12. (12).
    B. Reck et al., SPE Preprints 1988, 63.Google Scholar
  13. (13).
    J. W. Thackeray, G. W. Orsula, E. K. Pavelchek and D. Canistro, SPIE Vol. 1086, (1989), 34.ADSCrossRefGoogle Scholar
  14. (14).
    R. Schwalm, H. Binder, B. Dunbay and A. Krause, Polymers for Microelectronics, Conference, Tokyo, November 1989, Proceedings to be published.Google Scholar
  15. (15).
    J. Conway, Proc. KTI Microelectronics Seminar, Interface 88, 341.Google Scholar
  16. (16).
    D. Coyne, T. Brewer, Proceedings Kodak Interface’ 83, (1983), 40.Google Scholar
  17. (17).
    B. L. Draper, A. R. Mahoney and G. A. Bailey, J.Appl.Phys. 23 (1984), 1304.CrossRefGoogle Scholar
  18. (18).
    T. Nogushi et al., SPIE Vol. 920 (1988), 168.CrossRefGoogle Scholar
  19. (19).
    R. Sezi, M. Sebald and R. Leuschner, Polymer Engineering and Science, July 1989, Vol. 29, No. 13, 891.CrossRefGoogle Scholar
  20. (20).
    J. M. Shaw, M. Hatzakis, J. Paraszczak and E. Babich, Microelectronic Engineering 3 (1985), 293.CrossRefGoogle Scholar
  21. (21).
    J. P. W. Schellekens, Microelectronic Engineering 9 (1989), 561.CrossRefGoogle Scholar
  22. (22).
    R. Sezi, R. Leuschner, M. Sebald, H. Ahne, S. Birkle and H. Borndörfer, Microelectronic Engineering (1990), to be published.Google Scholar
  23. (23).
    private communication, S. Schwarzl.Google Scholar
  24. (24).
    M. Engelhardt, S. Schwarzl Proc Symp. on Dry Process, Electrochem. Soc. Proc. Vol. 88–7, 48 (1988).Google Scholar
  25. (25).
    M. Engelhardt, Proc. 15th Annual Tegal Plasma Seminar, 53 (1989).Google Scholar
  26. (26).
    T. Shibata et al, IEDM Tech. Dig. 1983, 27.Google Scholar
  27. (27).
    Ch. Zeller, F.X. Stelz, Proceed. 19th European Solid State Device Research Conf., Berlin 1989, 135-138.Google Scholar
  28. (28).
    Private communication, H. Vogt.Google Scholar
  29. (29).
    Pei-Lng Lee et al., J. Electrochem. Soc. Vol. 136, No. 7 (1989), 2108.CrossRefGoogle Scholar
  30. (30).
    J. Berthold, C. Wieczorek, Applied Surface Science 38 (1989) 506.ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • W. Beinvogl
    • 1
  • A. Gutmann
    • 1
  1. 1.Semiconductor GroupSiemens AGMunchen 83Germany

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