Abstract
The technological development of semiconductor materials started in the period following the second world war. In the electronics industry, the first transistors were fabricated from germanium, later from silicon. It was soon realized that also the AIII–BV or AII – BVI materials (most often simply termed III–V or II–VI materials) exhibited semiconductive behaviour. The energy difference between the valence band and the conduction band made them candidates for electronic devices which can absorb or emit phonons over a range of frequencies (wavelengths). Direct bandgap materials such as gallium arsenide (GaAs) were suitable for devices in which efficient electron-hole recombinations could take place and high efficiency light emitting devices were a possibility. Stimulated emission was first demonstrated in 1970 with the preparation of the single heterojunction and the double heterojunction laser diodes. These devices are multiple layer structures with a thin waveguide region contained between layers of larger bandgap and different refractive index (for confinement of carriers and radiation, respectively, in the active region). A basic laser diode chip consists of two parallel facets, (110) planes, which are prepared by cleavage and act as mirrors. The Fabry-Perot cavity is defined by these two parallel facets and the passive (cladding) layers. In the longitudinal direction current definition is by mesa etching and/or stripe-contact metallization.
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References
H.M. Manasevit, J. Electrochem. Soc. 116 (1969) 1725.
R.D. Dupuis and P.D. Dapkus, Appl. Phys. Lett. 31 (1977) 466.
M. Razeghi, B. de Cremoux and J.P. Duchemin, J. Cryst. Growth 68 (1984) 389.
M.R. Leys, Chemtronics 2 (1987) 155.
S.J. Bass, J. Cryst. Growth 31 (1975) 72.
J.P. Duchemin, M. Bonnet and F. Koelsch, J. Electrochem. Soc. 126 (1979) 1134.
P.M. Frijlink, J. Cryst. Growth 93 (1988) 207.
J. van Suchtelen, J.E.M. Hogenkamp, W.G.J.M. van Sark and L.J. Giling, J. Cryst. Growth 93 (1988) 201.
F.C. Eversteijn, P.J. Severin, C.H.J. van den Brekel and H.L. Peek, J. Electrochem. Soc. 117 (1970) 925.
K.F. Jensen, J. Cryst. Growth 98 (1989) 148.
R. Jet Field, J. Cryst. Growth 97 (1989) 739.
J.H. Van der Ven, G.J.M. Rutten, M.J. Raymakers and L.J. Giling, J. Cryst. Growth 79 (1986) 352.
C. van Opdorp and M.R. Leys, J. Cryst. Growth 84 (1987) 271.
C.A. Wang, S. Patnaik, J.W. Caunt and R.A. Brown, J. Cryst. Growth 93 (1988) 228.
L.M. Fraas, J. Electron. Mater. 15 (1986) 175.
W.T. Tsang, J. Cryst. Growth 98 (1989) 226.
Gaskill, D.K. et al., J. Cryst. Growth 77 (1986) 418.
Ludowise, M.J. and Cooper, C.B., SPIE 1982, 323, 117.
A. Brauers, O. Kayser, R. Kall, H. Heinecke, P. Balk and H. Hofman, J. Cryst. Growth 93 (1988) 7.
G.B. Stringfellow, J. Cryst. Growth, proceedings ICMOVPE 5, (1990)
Bass, S.J., J. Cryst. Growth 47 (1969) 613.
H.M. Manasevit and A.C. Thorsen, J. Electrochem. Soc. 119 (1972) 99.
Glew, R.W., J. Cryst. Growth 77 (1984) 44.
C.H. Chen, et al., J. Cryst. Growth 77 (1986) 11.
Glew, R.W., J. de Physique 43 (1982) 281.
T.F. Kuech, E. Veuhoff and B.S. Meyerson, J. Cryst. Growth 68 (1984) 48.
A.P. Roth, R. Yakimova and V.S. Sundaram, J. Cryst. Growth 68 (1984) 65.
J.D. Parsons and F.G. Krajenbrink, J. Cryst. Growth 68 (1984) 60.
D.W. Kisker, J. Cryst. Growth 100 (1990) 126.
J.A. Long, V.G. Riggs, A.T. Macrander and W.D. Johnston, J. Cryst. Growth 77 (1986) 42.
M. Akiyama, Y. Kawarada and K. Kaminishi, J. Cryst. Growth 68 (1984) 39.
V. Aebi, C.B. Cooper, R.L. Moon and R.R. Saxena, J. Cryst. Growth 55 (1981) 517.
J. Weber et al, J. Cryst. Growth 100 (1990) 467.
D.J. Schlyer and A.J. Ring, J Electrochem Soc. 124 (1977) 569.
M.R. Leys and H. Veenvliet, J. Cryst. Growth 55 (1981) 145.
D.H. Reep and S.K. Gandhi, J Electrochem Soc. 130 (1983) 675.
M. Tirtowidjojo and R. Pollard, J. Cryst. Growth 93 (1988) 108.
D.K. Gaskill, V. Kolubajev, N. Bottka, R.S. Sillmon and J.E. Butler, J. Cryst. Growth 93 (1988) 127.
R. Luckerath, P. Tommack, A. Hertling, H.J. Koss, P. Balk, K.F. Jensen and W. Richter, J. Cryst. Growth 93 (1988) 151.
K. Saito, E. Tokumitso, T. Akatsuka, M. Miyauchi, T. Yamada, M. Konagai and K. Takahashi, J. Appl. Phys. 64 (1988) 3975.
R. Bhat, J. Electron. Mater. 14 (1985) 433.
T.F. Kuech, E. Veuhoff, T.S. Kuan, V. Deline and P. Potemski, J. Cryst. Growth 77 (1986) 257.
N. Kobayashi and T. Makimoto, Jpn. J. Appl. Phys. 10 (1985) L824.
M.R. Leys, Chemtronics 3 (1988) 179.
M.R. Leys, Chemtronics 4 (1989) 31.
L.M. Yeddanapalli and C.C. Schubert, J. Chem. Phys. 14 (1946) 1.
A.J. Quimet, Dissertation University of Connecticut, USA, 1962
G.C. Osbourne in Semiconductors and Semimetals, Academic Press, New York (1987) 459.
M.E. Pistol, M.R. Leys, L. Samuelson, Phys. Rev. B37 (1988) 4664.
J.W. Matthews in: Epitaxial Growth, Part B, Ed. J.W. Matthews, Academic Press, New York (1975)
A. Gustafsson, Masters Thesis, University of Lund, Sweden (1990)
D. Hulland and D.J. Bacon, Introduction to dislocations, 3rd ed., Pergamon Press, Oxford (1984).
J. Petruzello, M.R. Leys, Appl. Phys. Lett. 53 (1988) 2414.
M.R. Leys, H. Titze, L. Samuelson, J. Petruzello, J. Cryst. Growth 93 (1988) 504.
G.H. Olsen, M.S. Abrahams and J.J. Zamerowski, J. Electrochem. Soc. 121 (1974) 650.
R. People, J.C. Bean, Appl. Phys. Lett 47 (1985) 322.
B.W. Dodson, P.A. Taylor, Appl. Phys. Lett. 49 (1986) 642.
T.M.J. Maree, J.C. Barbour, J.F. van der Veen, K.L. Kavanagh, C.W.R. Bulle-Lieuwma and M.P.A. Viegers, J. Appl. Phys. 62 (1987) 4413.
C.G. Tuppen, C.J. Gibbings and M. Hockly, Journ. Cryst. Growth 94 (1989) 392.
T.G. Andersson, Z.G. Chen, V.D. Kulakovskii, A. Uddin, J.T. Vallin. Appl. Phys. Lett. 51 (1987) 752.
Y. Fukuda, J. Cryst. Growth 100 (1990)
E.A. Fitzgerald, J. Vac. Sci. Technol. B7 (1989) 782.
F. Turco and J. Massies, Appl. Phys. Lett. 51 (1987) 1989.
A.C. Jones, P.J. Wright, P.E. Oliver, B. Cockayne and J.S. Roberts, J. Cryst. Growth 100 (1990) 395.
L. Pohl, M. Hostalek, H. Luth, A. Brauers and F. Scholz, J. Cryst. Growth, proceedings IC MOVPE V, to be published.
S.M. Bedair et al., Appl. Phys. Lett. 47 (1985) 51.
M. Ozeki, N. Ohtsuka, Y. Sakuma and K. Kodama J. Cryst. Growth, proceedings IC MOVPE V, to be published
A. Robertson, T.H. Chiu, W.T. Tsang and J.E. Cunningham, J. Appl. Phys. 64 (1988) 877.
D.E. Aspnes, R. Bhat, E. Colas, V.G. Keramidas, M.A. Koza and A.A. Studna, J. Vac. Sci. Technol. A7 (1989) 711.
J. Jonsson, K. Deppert, S. Jeppesen, G. Paulsson, L. Samuelson and P. Schmidt, Appl. Phys. Lett. 56 (1990) 1.
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Leys, M.R. (1991). Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layers. In: Peaker, A.R., Grimmeiss, H.G. (eds) Low-Dimensional Structures in Semiconductors. NATO ASI Series, vol 281. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0623-6_5
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