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Fabrication of Artificially Layered III–V Semiconductors by Beam Epitaxy and Aspects of Additional Lateral Patterning

  • Klaus Ploog
Part of the NATO ASI Series book series (NSSB, volume 281)

Abstract

The improvement of epitaxial growth techniques has reached a status where monolayer dimensions in artificially layered semiconductor crystals are being routinely controlled to form a new class of materials with accurately tailored electrical and optical properties /1/. The unique capabilities of the advanced epitaxial growth techniques in terms of spatially resolved materials synthesis has stimulated the inspiration of device engineers to design a whole new generation of electronic and photonic devices based on the concept of band-gap engineering /2/. This concept, also called wavefunction or density-of-states engineering, respectively, relies on the arbitrary modulation of the band-edge potential in semiconductors through the abrupt change of composition (e.g. GaAs/AlAs, Gax In1−x As/InP, GaSb/InAs, Si/Ge, etc.) or of dopant species normal to the growth surface /3/. Applying additional lateral confinement to these artificially layered materials via lithographically defined submicron patterns has produced a new class of exotic semiconductor structures in which the quantum-mechanical properties of the electron (hole) can be fully exploited. The microscopic structuring or engineering of semiconducting solids to within atomic dimensions is thus achieved by the incorporation of interfaces (consisting of abrupt homo- or heterojunctions) into a crystal in well-defined geometrical and spatial arrangements. The electrical and optical properties of these low-dimensional semiconductor structures are then defined locally, and phenomena related to extremely small dimensions (“quantum size effects”) become more important than the actual chemical properties of the materials involved.

Keywords

Molecular Beam Epitaxy Quantum Wire Reflection High Energy Electron Diffraction Multiple Quantum Well High Electron Mobility Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Klaus Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart-80Germany

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