Hot Electrons and Degradation Effects in FET Devices
We consider various types of field-effect devices under operating conditions to show that carriers are heated to substantial energies above kT. It is shown that light emission from the hot electrons provides a measurement of their energy distribution. We discuss degradation effects and show how the spatial location of inferface defects may determined.
KeywordsGate Voltage Minority Carrier Generation Zone High Electron Mobility Transistor Drain Contact
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- /1/.T. Figielski and A. Torun, On the Origin of Light Emitted from Reverse Biased p-n Junctions, in: Proc. of the Int. Conf. on the Physics of Semiconductor, Exeter, 863, 1962.Google Scholar
- /5/.M. Herzog, F. Koch, C. Moglestue and J. Rosenzweig, Proc. GaAs and Related Compounds 1990, to be published.Google Scholar
- /6/.M. Bollu and F. Koch, Quantum Transport Effects in Small Si-MOS Devices, Proc. 18th Int. Conf. on the Physics of Semiconductors (Stockholm), p. 1519, World Scientific (1987).Google Scholar