Hot Electrons and Degradation Effects in FET Devices

Part of the NATO ASI Series book series (NSSB, volume 281)

Abstract

We consider various types of field-effect devices under operating conditions to show that carriers are heated to substantial energies above kT. It is shown that light emission from the hot electrons provides a measurement of their energy distribution. We discuss degradation effects and show how the spatial location of inferface defects may determined.

Keywords

Gate Voltage Minority Carrier Generation Zone High Electron Mobility Transistor Drain Contact 
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References

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • F. Koch
    • 1
  1. 1.Physik-Department E16Technische Universität MünchenGarchingGermany

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