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Properties of Electron-Hole-Drops in Ge in Magnetic Field

  • D. Bimberg
  • M. S. Skolnick
Chapter
Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 60)

Abstract

In a number of semiconductors like Ge, Si, GaP and SiC1–3 a first order electronic phase transition occurs below a critical temperature in a dense system (plasma) of electrons and holes or excitons. The plasma separates into a high density metallic electron-hole liquid (EHL) and a low density gas-like plasma. Macroscopically the EHL exhibits properties of a classical fluid existing in the form of drops, which can be driven by external forces. Microscopically the fluid has a strong quantum character (in Ge the de Boer number is ~80). The results of most recent experiments on the EHL in Ge in magnetic fields up to 20T are discussed in this paper. Both macroscopic and microscopic properties of the liquid are revealed by these experiments. Magnetic field investigations of the EHL in Ge are particularly interesting since it is possible to observe at one and the same field effects characteristics of the low field regime, where the Fermi energy is larger than the splitting of the lowest Landau levels, and of the high field regime where the Fermi energy is smaller than the splitting of the Landau levels. The reason for this unusual behaviour is that the EHL is a two-component fluid with energy splittings of the lowest electron and hole magnetic subbands differing by more than one order of magnitude. In Ge for Hll <111> the high field limit is reached for electrons at ~3T and for holes at ~77T.

Keywords

Landau Level Lower Landau Level Magnetic Field Experiment Magnetic Field Investigation High Field Limit 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    See the review by J C Hensel, T G Phillips and G A Thomas in Solid State Physics Vol 32, H Ehrenreich, F Seitz and D Turnbull eds, Academic Press, New York (1977).Google Scholar
  2. 2.
    D Bimberg, M S Skolnick and L M Sander, Phys Rev B19, 2231 (1979).ADSGoogle Scholar
  3. 3.
    D Bimberg, M S Skolnick and W J Choyke, Phys Rev Lett 40, 56 (1978).ADSCrossRefGoogle Scholar
  4. 4.
    M S Skolnick and D Bimberg, Phys Rev B, to be published.Google Scholar
  5. 5.
    D Bimberg and J L Piche, unpublished.Google Scholar
  6. 6.
    J C Hensel and K Suzuki, Phys Rev B9, 4148 (1974).Google Scholar
  7. 7.
    H L Stornier, R W Martin and J C Hensel, Proc 13th Int Conf Phys of Semiconductors, p 950, F G Fumi ed, Marves, Rome (1976).Google Scholar
  8. 8.
    T M Rice, Il Nuovo Cimento 23B, 226 (1974).ADSGoogle Scholar
  9. 9.
    R W Martin, H L Stornier, W Rühle and D Bimberg, J Luminescence 12/13, 645 (1976).CrossRefGoogle Scholar
  10. 10.
    D Bimberg and M S Skolnick, To be published.Google Scholar
  11. 11.
    D Bimberg, J of Magnetism and Magnetic Materials 11, 91 (1979).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1980

Authors and Affiliations

  • D. Bimberg
    • 1
  • M. S. Skolnick
    • 2
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.Royal Signals and Radar EstablishmentWorcestershireEngland

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