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Far Infrared Optical and Magneto-Optical Studies of Si Space Charge Layers

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Theoretical Aspects and New Developments in Magneto-Optics

Part of the book series: Nato Advanced Study Institutes Series ((NSSB,volume 60))

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Abstract

The pioneering work on Si space charge layers was carried out more than a decade ago by workers at IBM.1, 2 The experimental vehicle for these studies was the Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) which plays such a dominant role in current electronics technology. Experimental,1, 3 transport and magneto-transport, and theoretical4 investigations were made at this time. These low temperature studies demonstrated the two-dimensional (2D) nature of carrier motion in the plane of the interface, and it was felt that a reasonable understanding of the electronic properties of this system, based on a self-consistent Hartree model was in hand. As a result relatively few additional studies were carried out for several years after 1968.

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Authors and Affiliations

  1. Naval Research Laboratory, Washington, D. C., 20375, USA

    B. D. McCombe

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  1. University of Antwerp, Antwerp, Belgium

    Jozef T. Devreese

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McCombe, B.D. (1980). Far Infrared Optical and Magneto-Optical Studies of Si Space Charge Layers. In: Devreese, J.T. (eds) Theoretical Aspects and New Developments in Magneto-Optics. Nato Advanced Study Institutes Series, vol 60. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0454-6_18

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  • DOI: https://doi.org/10.1007/978-1-4899-0454-6_18

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