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Two-Photon Absorption and Spin-Flip Raman Scattering in Small Band Gap Semiconductors

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Theoretical Aspects and New Developments in Magneto-Optics

Part of the book series: Nato Advanced Study Institutes Series ((NSSB,volume 60))

Abstract

Semiconductors are a particularly advantageous host for the observation of nonlinear optical (NLO) processes because they are transparent to photons of energy below the band gap and can still contain a relatively high carrier concentration (Wolff, 1975). Intra- and inter-band electronic transitions cause a variety of NLO processes such as Raman scattering, multiphoton mixing, two-photon absorption (TPA), optical saturation and self-focussing, all of which are associated with the third order susceptibility χ(3) In particular, these effects are strongly enhanced for semiconductors with a small energy gap and conduction band effective mass, which form the subject matter of the present work. We have recently shown that the resulting non-parabolic energy bands cause a major departure from the TPA predicted from older theories (Pidgeon et al., 1979).

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Author information

Authors and Affiliations

  1. Department of Physics, Heriot-Watt University, Edinburgh, UK

    Carl R. Pidgeon

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  1. Carl R. Pidgeon
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Editors and Affiliations

  1. University of Antwerp, Antwerp, Belgium

    Jozef T. Devreese

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Pidgeon, C.R. (1980). Two-Photon Absorption and Spin-Flip Raman Scattering in Small Band Gap Semiconductors. In: Devreese, J.T. (eds) Theoretical Aspects and New Developments in Magneto-Optics. Nato Advanced Study Institutes Series, vol 60. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0454-6_10

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  • DOI: https://doi.org/10.1007/978-1-4899-0454-6_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-0456-0

  • Online ISBN: 978-1-4899-0454-6

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