Diffusion and Dissociation of Two-Dimensional Islands on FCC Metal (100) Surfaces
The mobility and the stability of small two-dimensional islands on a substrate are basic issues of surface science and thin-film growth. In this article, we present our main results from a series of theoretical studies of island diffusion and dissociation on several fcc metal (100) surfaces, with and without the effects of hydrogen as surface impurities. We found that a collective atomic process, shearing of a dimer belonging to a compact island, in many cases provides the most effective pathway for island diffusion. Consideration of this novel atomic process leads to the possibility of observing a new set of critical island sizes in dynamical island growth or coarsening. When H is introduced into the Ni system, the mobility of adatoms and islands of all sizes are enhanced. This conclusion suggests that H will function as an anti-surfactant in Ni(100) homoepitaxy.
KeywordsIsland Size Embed Atom Method Adatom Diffusion Island Edge Corner Atom
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