Abstract
The mobility and the stability of small two-dimensional islands on a substrate are basic issues of surface science and thin-film growth. In this article, we present our main results from a series of theoretical studies of island diffusion and dissociation on several fcc metal (100) surfaces, with and without the effects of hydrogen as surface impurities. We found that a collective atomic process, shearing of a dimer belonging to a compact island, in many cases provides the most effective pathway for island diffusion. Consideration of this novel atomic process leads to the possibility of observing a new set of critical island sizes in dynamical island growth or coarsening. When H is introduced into the Ni system, the mobility of adatoms and islands of all sizes are enhanced. This conclusion suggests that H will function as an anti-surfactant in Ni(100) homoepitaxy.
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Zhang, Z., Shi, ZP., Haug, K. (1997). Diffusion and Dissociation of Two-Dimensional Islands on FCC Metal (100) Surfaces. In: Tringides, M.C. (eds) Surface Diffusion. NATO ASI Series, vol 360. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0262-7_9
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DOI: https://doi.org/10.1007/978-1-4899-0262-7_9
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