Abstract
During the growth of SiGe films on vicinal Si(001), stress-induced step bunching of the preexisting substrate steps occurs as an early mechanism of elastic strain relief. We use atomic-force microscopy to investigate the resulting ripple morphologies as a function of substrate miscut. The ripples always follow the step orientation. However, for a specific vicinality the step bunch transforms into zigzag pattern consisting of energetically more favorable {105} facets. We investigate the influence of the ripples on the arrangement of the subsequently evolving three-dimensional islands. Finally, the evolution of the step bunches in SiGe/Si multilayer films is discussed.
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Teichert, C., Phang, Y.H., Peticolas, L.J., Bean, J.C., Lagally, M.G. (1997). Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001) Substrates. In: Tringides, M.C. (eds) Surface Diffusion. NATO ASI Series, vol 360. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0262-7_27
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DOI: https://doi.org/10.1007/978-1-4899-0262-7_27
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