Low-Temperature Epitaxial Growth of Thin Metal Films: In Situ Electrical Resistivity Study

  • M. Jalochowski
  • M. Hoffmann
  • E. Bauer
Part of the NATO ASI Series book series (NSSB, volume 360)


In the past several years the role of various mechanisms governing the epitaxial layer-by-layer growth mode of metal films at room or even lower temperatures has been discussed in many experimental and theoretical works. Observations of RHEED specular beam intensity oscillations during deposition of Pb at helium temperatures on Si(111) − (6 × 6)-Au, and the presence of pronounced Quantum Size Effects (QSE) in the electrical resistivity,1 have clearly shown that epitaxial layer-by-layer growth even at lowest temperatures is possible.


Electrical Resistivity Growth Mode Quantum Size Effect Mean Free Path RHEED Pattern 
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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • M. Jalochowski
    • 1
  • M. Hoffmann
    • 2
  • E. Bauer
    • 2
  1. 1.Institute of PhysicsMaria Curie-Sklodowska UniversityLublinPoland
  2. 2.Physikalisches InstitutTechnische Universität ClausthalClausthal-ZellerfeldFederal Republic of Germany

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