Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6

  • J. H. G. Owen
  • K. Miki
  • D. Bowler
  • G. A. D. Briggs
  • I. Goldfarb
Part of the NATO ASI Series book series (NSSB, volume 360)

Abstract

In this study we have investigated the mechanism of Si and Ge growth from gaseous precursors, at intermediate temperatures, in elevated-temperature scanning tunnelling microscope (STM). Based on our observations, we suggest a plausible mechanism for the growth of Ge and Si from GeH4 and Si2H6.

Keywords

Molecular Beam Epitaxy Scanning Tunnelling Microscope Scanning Tunnelling Microscope Image Step Edge Denude Zone 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • J. H. G. Owen
    • 1
  • K. Miki
    • 1
  • D. Bowler
    • 1
  • G. A. D. Briggs
    • 1
  • I. Goldfarb
    • 1
  1. 1.Department of MaterialsUniversity of OxfordOxfordEngland

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